Infineon Technologies IRLML2402TRPBF

Name: IRLML2402TRPBF
Brand: Infineon Technologies
SKU: 2478961-IRLML2402TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLML2402TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478961-IRLML2402TRPBF

Description:: MOSFET N-CH 20V 1.2A SOT-23

ECAD Model:

Datasheet:: IRLML2402TRPBF

Specifications

Infineon Technologies IRLML2402TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2402TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
Micro3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
250mOhm
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.2A
Time@Peak Reflow Temperature-Max (s)
30
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
540mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
540mW
Turn On Delay Time
2.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
110pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta
Gate Charge (Qg) (Max) @ Vgs
3.9nC @ 4.5V
Rise Time
9.5ns
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
4.8 ns
Turn-Off Delay Time
9.7 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Nominal Vgs
700 mV
Min Breakdown Voltage
20V
Height
1.016mm
Length
3.0226mm
Width
3.05mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLML2402TRPBF Description

IRLML2402TRPBF MOSFET is based on established silicon processes that provide designers with an extensive range of devices that can be used to support a variety of applications like AC motors and inverters lighting, SMPS loads, as well as battery-powered applications. They are available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing.

IRLML2402TRPBF Features

Increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
High performance in low frequency applications
Standard pinout allows for drop in replacement

IRLML2402TRPBF Applications

DC Switches
Load Switch

IRLML2402TRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS /-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Transistor NPN Mos IRLML2402/IRLML2402TRPBF INTERNATIONAL RECTIFIER RoHS Ampere=1.2 V=20 SOt23
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; 150C Operating Temperature | Target Applications: DC Switches; Load Switch
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:930mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 4.8 / Rise Time ns = 9.5 / Turn-OFF Delay Time ns = 9.7 / Turn-ON Delay Time ns = 2.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.2A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.54W; Power, Pd:0.54W; Quantity, Reel:3000; SMD Marking:1A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, External:3.05mm; Width, Tape:8mm

Product Comparison

The three parts on the right have similar specifications to IRLML2402TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Min Breakdown Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Terminal Finish

Drain to Source Voltage (Vdss)

Recovery Time

Radiation Hardening

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Surface Mount

JESD-30 Code

Operating Temperature (Max)

Configuration

JEDEC-95 Code

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Power Dissipation-Max (Abs)

View Compare
IRLML2402TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

Micro3

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

250mOhm

HIGH RELIABILITY

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

1.2A

30

Not Qualified

1

540mW Ta

Single

ENHANCEMENT MODE

540mW

2.5 ns

N-Channel

SWITCHING

250m Ω @ 930mA, 4.5V

700mV @ 250μA

110pF @ 15V

1.2A Ta

3.9nC @ 4.5V

9.5ns

2.7V 4.5V

±12V

4.8 ns

9.7 ns

1.2A

700mV

12V

20V

20V

700 mV

20V

1.016mm

3.0226mm

3.05mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLML2244TRPBF

Infineon Technologies

12 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2011

e3

Active

1 (Unlimited)

3

-

EAR99

95MOhm

-

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

-

1

1.3W Ta

Single

ENHANCEMENT MODE

1.3W

7 ns

P-Channel

SWITCHING

54m Ω @ 4.3A, 4.5V

1.1V @ 10μA

570pF @ 16V

4.3A Ta

6.9nC @ 4.5V

12ns

2.5V 4.5V

±12V

25 ns

34 ns

4.3A

-1.1V

12V

-20V

-

-1.1 V

-

1.02mm

3.04mm

1.4mm

No SVHC

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

20V

32 ns

No

-

-

-

-

-

-

-

-

-

-

-

IRLML2402TRPBF vs IRLML2244TRPBF
IRLML5203TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

98MOhm

-

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-3A

-

-

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

12 ns

P-Channel

SWITCHING

98m Ω @ 3A, 10V

2.5V @ 250μA

510pF @ 25V

3A Ta

14nC @ 10V

18ns

4.5V 10V

±20V

52 ns

88 ns

-3A

-2.5V

20V

-30V

-30V

-2.5 V

-

1.016mm

3.0226mm

3.05mm

No SVHC

ROHS3 Compliant

Contains Lead

-

30V

-

No

3A

24A

-

-

-

-

-

-

-

-

-

IRLML2402TRPBF vs IRLML5203TRPBF
IRLML6402TR

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-

-

Cut Tape (CT)

HEXFET®

2003

e3

Obsolete

1 (Unlimited)

3

-

EAR99

-

HIGH RELIABILITY

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

Not Qualified

1

-

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

65m Ω @ 3.7A, 4.5V

1.2V @ 250μA

633pF @ 10V

3.7A Ta

12nC @ 5V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

Matte Tin (Sn)

20V

-

-

3.7A

22A

YES

R-PDSO-G3

150°C

SINGLE WITH BUILT-IN DIODE

TO-236AB

0.065Ohm

20V

11 mJ

1.3W

IRLML2402TRPBF vs IRLML6402TR