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IRGS4607DPBF

Infineon Technologies IRGS4607DPBF

Part Number:
IRGS4607DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497123-IRGS4607DPBF
Description:
IGBT 600V 11A 58W D2PAK
ECAD Model:
Datasheet:
IRGx4607DPbF

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Specifications
Infineon Technologies IRGS4607DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4607DPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    260.39037mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Power Dissipation
    58W
  • Terminal Form
    GULL WING
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    58W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.05V
  • Max Collector Current
    11A
  • Reverse Recovery Time
    48 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.75V
  • Turn On Time
    51 ns
  • Test Condition
    400V, 4A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.05V @ 15V, 4A
  • Turn Off Time-Nom (toff)
    95 ns
  • Gate Charge
    9nC
  • Current - Collector Pulsed (Icm)
    12A
  • Td (on/off) @ 25°C
    27ns/120ns
  • Switching Energy
    140μJ (on), 62μJ (off)
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
Description
IRGS4607DPBF Description
IRGS4607DPBF is a 600V Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Infineon IRGS4607DPBF has Low VCE(ON) and Switching Losses to provide high efficiency in a wide range of applications. The IRGS4607DPBF can be applied in industrial motor drives, UPS, solar inverters, and welding. The Operating and Storage Temperature Range is between -40 and 175℃. And the Amplifier IRGS4607DPBF is in the DPAK-3 package with 58W power dissipation.

IRGS4607DPBF Features
Low VCE(ON) and Switching Losses 5μs Short Circuit SOA  Square RBSOA Maximum Junction Temperature 175°C  Positive VCE (ON) Temperature Coefficient

IRGS4607DPBF Applications
Industrial Motor Drive  UPS  Solar Inverters   Welding
IRGS4607DPBF More Descriptions
Trans IGBT Chip N-CH 600V 11A 58000mW 3-Pin(2 Tab) D2PAK Tube
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT Transistors 600V TRENCH ULTRAFAST IGBT
IGBT, SINGLE, 600V, 11A, TO-263
IGBT, SINGLE, 600V, 11A, TO-263; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins:
Product Comparison
The three parts on the right have similar specifications to IRGS4607DPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Terminal Form
    Reach Compliance Code
    JESD-30 Code
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Factory Lead Time
    Voltage - Rated DC
    Current Rating
    Base Part Number
    Power Dissipation
    Rise Time
    IGBT Type
    Radiation Hardening
    Lead Free
    JESD-609 Code
    Terminal Finish
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Max Breakdown Voltage
    View Compare
  • IRGS4607DPBF
    IRGS4607DPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    260.39037mg
    SILICON
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    2
    EAR99
    58W
    GULL WING
    unknown
    R-PSSO-G2
    1
    Single
    COLLECTOR
    Standard
    58W
    POWER CONTROL
    N-CHANNEL
    2.05V
    11A
    48 ns
    600V
    1.75V
    51 ns
    400V, 4A, 100 Ω, 15V
    2.05V @ 15V, 4A
    95 ns
    9nC
    12A
    27ns/120ns
    140μJ (on), 62μJ (off)
    4.83mm
    10.67mm
    9.65mm
    No SVHC
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGS6B60KPBF
    IRGS6B60KPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    2
    EAR99
    90W
    GULL WING
    -
    R-PSSO-G2
    1
    Single
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    2.2V
    13A
    -
    600V
    1.8V
    45 ns
    400V, 5A, 100 Ω, 15V
    2.2V @ 15V, 5A
    258 ns
    18.2nC
    26A
    25ns/215ns
    110μJ (on), 135μJ (off)
    4.703mm
    10.67mm
    9.652mm
    No SVHC
    RoHS Compliant
    11 Weeks
    600V
    13A
    IRGS6B60KPBF
    90W
    17ns
    NPT
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRGS4607DPBF vs IRGS6B60KPBF
  • IRGSL30B60KPBF
    IRGSL30B60KPBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    2.084002g
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    Obsolete
    1 (Unlimited)
    3
    EAR99
    370W
    -
    -
    -
    1
    Single
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    2.35V
    78A
    -
    600V
    2.35V
    74 ns
    400V, 30A, 10 Ω, 15V
    2.35V @ 15V, 30A
    237 ns
    102nC
    120A
    46ns/185ns
    350μJ (on), 825μJ (off)
    9.652mm
    10.668mm
    4.826mm
    -
    RoHS Compliant
    11 Weeks
    -
    -
    -
    370W
    -
    NPT
    No
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    260
    30
    20V
    5.5V
    42ns
    -
    IRGS4607DPBF vs IRGSL30B60KPBF
  • IRGS6B60KDTRLP
    IRGS6B60KDTRLP
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    260.39037mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    Last Time Buy
    1 (Unlimited)
    2
    -
    90W
    GULL WING
    -
    R-PSSO-G2
    1
    Single
    COLLECTOR
    Standard
    90W
    MOTOR CONTROL
    N-CHANNEL
    2.2V
    13A
    70 ns
    600V
    -
    45 ns
    400V, 5A, 100 Ω, 15V
    2.2V @ 15V, 5A
    258 ns
    18.2nC
    26A
    25ns/215ns
    110μJ (on), 135μJ (off)
    -
    -
    -
    -
    ROHS3 Compliant
    13 Weeks
    -
    -
    IRGS6B60KDPBF
    -
    -
    NPT
    No
    Lead Free
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    260
    30
    -
    -
    -
    600V
    IRGS4607DPBF vs IRGS6B60KDTRLP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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