Infineon Technologies IRGS10B60KDTRLP
- Part Number:
- IRGS10B60KDTRLP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587164-IRGS10B60KDTRLP
- Description:
- IGBT 600V 22A 156W D2PAK
- ECAD Model:
-
- Datasheet:
- IRG(B,S,SL)10B60KDPbF
Infineon Technologies IRGS10B60KDTRLP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS10B60KDTRLP.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight260.39037mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Max Power Dissipation156W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRGS10B60KDPBF
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max156W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current22A
- Reverse Recovery Time90 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time50 ns
- Test Condition400V, 10A, 47 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 10A
- Turn Off Time-Nom (toff)276 ns
- IGBT TypeNPT
- Gate Charge38nC
- Current - Collector Pulsed (Icm)44A
- Td (on/off) @ 25°C30ns/230ns
- Switching Energy140μJ (on), 250μJ (off)
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRGS10B60KDTRLP Description
IRGS10B60KDTRLP manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) nonpunch through IGBT technology. Moreover, the IRGS10B60KDTRLP IGBT delivers rugged transient performance and low EMI.
IRGS10B60KDTRLP Features
10μs short circuit capability Square RBSOA Ultrasoft diode reverse recovery characteristics Positive VCE (on) temperature coefficient
IRGS10B60KDTRLP Applications
UPS Motor control
IRGS10B60KDTRLP manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) nonpunch through IGBT technology. Moreover, the IRGS10B60KDTRLP IGBT delivers rugged transient performance and low EMI.
IRGS10B60KDTRLP Features
10μs short circuit capability Square RBSOA Ultrasoft diode reverse recovery characteristics Positive VCE (on) temperature coefficient
IRGS10B60KDTRLP Applications
UPS Motor control
IRGS10B60KDTRLP More Descriptions
Trans IGBT Chip N-CH 600V 22A 3-Pin(2 Tab) D2PAK T/R
Copacked 600V IGBT in a D2-Pak package with ultrafast 10-30 kHz soft recovery diode, D2PAKCOPAK, RoHSInfineon SCT
Tape & Reel (TR) Surface Mount NPT Non-RoHS Compliant IGBT Transistor 2.2V @ 15V 10A 22A 156W 90ns
Target Applications: Fan; Pump; Washing Machine
Copacked 600V IGBT in a D2-Pak package with ultrafast 10-30 kHz soft recovery diode, D2PAKCOPAK, RoHSInfineon SCT
Tape & Reel (TR) Surface Mount NPT Non-RoHS Compliant IGBT Transistor 2.2V @ 15V 10A 22A 156W 90ns
Target Applications: Fan; Pump; Washing Machine
The three parts on the right have similar specifications to IRGS10B60KDTRLP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusSubcategoryCollector Emitter Saturation VoltageGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)ECCN CodeVoltage - Rated DCCurrent RatingPower DissipationRise TimeHeightLengthWidthREACH SVHCLead FreeView Compare
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IRGS10B60KDTRLP16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~150°C TJTape & Reel (TR)2004e3Obsolete1 (Unlimited)2Matte Tin (Sn) - with Nickel (Ni) barrier156WGULL WING26030IRGS10B60KDPBFR-PSSO-G21SingleCOLLECTORStandard156WMOTOR CONTROLN-CHANNEL2.2V22A90 ns600V600V50 ns400V, 10A, 47 Ω, 15V2.2V @ 15V, 10A276 nsNPT38nC44A30ns/230ns140μJ (on), 250μJ (off)NoRoHS Compliant---------------- -
9 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~175°C TJTape & Reel (TR)2005e3Last Time Buy1 (Unlimited)2Matte Tin (Sn) - with Nickel (Ni) barrier370WGULL WING26030IRGS30B60KPBFR-PSSO-G21SingleCOLLECTORStandard370WMOTOR CONTROLN-CHANNEL2.35V78A-600V600V74 ns400V, 30A, 10 Ω, 15V2.35V @ 15V, 30A237 nsNPT102nC120A46ns/185ns350μJ (on), 825μJ (off)NoROHS3 CompliantInsulated Gate BIP Transistors1.95V20V5.5V42ns----------
-
16 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-SILICON-55°C~150°C TJTube2012e3Obsolete1 (Unlimited)3Matte Tin (Sn) - with Nickel (Ni) barrier90W-26030--1SingleCOLLECTORStandard-MOTOR CONTROLN-CHANNEL2.2V13A70 ns600V-45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)NoRoHS CompliantInsulated Gate BIP Transistors2V20V5.5V27nsEAR99600V13A90W17ns9.652mm10.668mm4.826mmNo SVHCLead Free
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16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~175°C TJTape & Reel (TR)2004e3Obsolete1 (Unlimited)2MATTE TIN63WGULL WING--IRGS4B60KD1PBFR-PSSO-G21SingleCOLLECTORStandard63WMOTOR CONTROLN-CHANNEL2.5V11A93 ns600V600V40 ns400V, 4A, 100 Ω, 15V2.5V @ 15V, 4A199 nsNPT12nC22A22ns/100ns73μJ (on), 47μJ (off)NoRoHS Compliant---------------
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