Infineon Technologies IRGS4B60KD1TRLP
- Part Number:
- IRGS4B60KD1TRLP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854581-IRGS4B60KD1TRLP
- Description:
- IGBT 600V 11A 63W D2PAK
- ECAD Model:
-
- Datasheet:
- IRGS4B60KD1TRLP
Infineon Technologies IRGS4B60KD1TRLP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4B60KD1TRLP.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight260.39037mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- Max Power Dissipation63W
- Terminal FormGULL WING
- Base Part NumberIRGS4B60KD1PBF
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max63W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.5V
- Max Collector Current11A
- Reverse Recovery Time93 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time40 ns
- Test Condition400V, 4A, 100 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
- Turn Off Time-Nom (toff)199 ns
- IGBT TypeNPT
- Gate Charge12nC
- Current - Collector Pulsed (Icm)22A
- Td (on/off) @ 25°C22ns/100ns
- Switching Energy73μJ (on), 47μJ (off)
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRGS4B60KD1TRLP Description
IRGS4B60KD1TRLP is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SIGC100T60R3EX1SA4 operates between -55°C~175°C TJ, and its Current - Collector (Ic) (Max) is 11A. The IRGS4B60KD1TRLP has 3 pins and it is available in Tape & Reel (TR) packaging way. IRGS4B60KD1TRLP has a 600V Voltage - Collector Emitter Breakdown (Max) value.
IRGS4B60KD1TRLP Features
Low VCE (on) Non-Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
IRGS4B60KD1TRLP Applications
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGS4B60KD1TRLP is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SIGC100T60R3EX1SA4 operates between -55°C~175°C TJ, and its Current - Collector (Ic) (Max) is 11A. The IRGS4B60KD1TRLP has 3 pins and it is available in Tape & Reel (TR) packaging way. IRGS4B60KD1TRLP has a 600V Voltage - Collector Emitter Breakdown (Max) value.
IRGS4B60KD1TRLP Features
Low VCE (on) Non-Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
IRGS4B60KD1TRLP Applications
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGS4B60KD1TRLP More Descriptions
Trans IGBT Chip N-CH 600V 11A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
French Electronic Distributor since 1988
CAP CER 4700PF 100V X7R RADIAL
French Electronic Distributor since 1988
CAP CER 4700PF 100V X7R RADIAL
The three parts on the right have similar specifications to IRGS4B60KD1TRLP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal FormBase Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusECCN CodeVoltage - Rated DCCurrent RatingPower DissipationRise TimeCollector Emitter Saturation VoltageHeightLengthWidthREACH SVHCLead FreeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)View Compare
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IRGS4B60KD1TRLP16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~175°C TJTape & Reel (TR)2004e3Obsolete1 (Unlimited)2MATTE TIN63WGULL WINGIRGS4B60KD1PBFR-PSSO-G21SingleCOLLECTORStandard63WMOTOR CONTROLN-CHANNEL2.5V11A93 ns600V600V40 ns400V, 4A, 100 Ω, 15V2.5V @ 15V, 4A199 nsNPT12nC22A22ns/100ns73μJ (on), 47μJ (off)NoRoHS Compliant------------------ -
11 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-SILICON-55°C~150°C TJTube2004-Obsolete1 (Unlimited)2-90WGULL WINGIRGS6B60KPBFR-PSSO-G21SingleCOLLECTORStandard-MOTOR CONTROLN-CHANNEL2.2V13A-600V-45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)NoRoHS CompliantEAR99600V13A90W17ns1.8V4.703mm10.67mm9.652mmNo SVHCLead Free------
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11 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA32.084002gSILICON-55°C~175°C TJTube2005e3Obsolete1 (Unlimited)3Matte Tin (Sn) - with Nickel (Ni) barrier370W---1SingleCOLLECTORStandard-MOTOR CONTROLN-CHANNEL2.35V78A-600V-74 ns400V, 30A, 10 Ω, 15V2.35V @ 15V, 30A237 nsNPT102nC120A46ns/185ns350μJ (on), 825μJ (off)NoRoHS CompliantEAR99--370W-2.35V9.652mm10.668mm4.826mm--Insulated Gate BIP Transistors2603020V5.5V42ns
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16 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-SILICON-55°C~150°C TJTube2012e3Obsolete1 (Unlimited)3Matte Tin (Sn) - with Nickel (Ni) barrier90W---1SingleCOLLECTORStandard-MOTOR CONTROLN-CHANNEL2.2V13A70 ns600V-45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)NoRoHS CompliantEAR99600V13A90W17ns2V9.652mm10.668mm4.826mmNo SVHCLead FreeInsulated Gate BIP Transistors2603020V5.5V27ns
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