Infineon Technologies IRGS30B60KTRRP
- Part Number:
- IRGS30B60KTRRP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854939-IRGS30B60KTRRP
- Description:
- IGBT 600V 78A 370W D2PAK
- ECAD Model:
-
- Datasheet:
- IRGS30B60KTRRP
Infineon Technologies IRGS30B60KTRRP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS30B60KTRRP.
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight260.39037mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation370W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRGS30B60KPBF
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max370W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.35V
- Max Collector Current78A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.95V
- Max Breakdown Voltage600V
- Turn On Time74 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 30A
- Turn Off Time-Nom (toff)237 ns
- IGBT TypeNPT
- Gate Charge102nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C46ns/185ns
- Switching Energy350μJ (on), 825μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.5V
- Fall Time-Max (tf)42ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRGS30B60KTRRP Description
The IRGS30B60KTRRP is a N Channel IGBT.
IRGS30B60KTRRP Features
Low VCE (on) Non-Punch Through IGBT Technology
10μs Short Circuit Capability
Square RBSOA
Positive VCE (on) Temperature Coefficient
Maximum Junction Temperature rated at 175°C
Lead-Free
IRGS30B60KTRRP Applications
Motor Control
The IRGS30B60KTRRP is a N Channel IGBT.
IRGS30B60KTRRP Features
Low VCE (on) Non-Punch Through IGBT Technology
10μs Short Circuit Capability
Square RBSOA
Positive VCE (on) Temperature Coefficient
Maximum Junction Temperature rated at 175°C
Lead-Free
IRGS30B60KTRRP Applications
Motor Control
IRGS30B60KTRRP More Descriptions
Trans IGBT Chip N-CH 600V 78A 370000mW 3-Pin(2 Tab) D2PAK T/R
TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,78A I(C),TO-263AB
IGBT Transistors 600V 30AD2PAK
INSULATED GATE BIPOLAR TRANSISTO
TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,78A I(C),TO-263AB
IGBT Transistors 600V 30AD2PAK
INSULATED GATE BIPOLAR TRANSISTO
The three parts on the right have similar specifications to IRGS30B60KTRRP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningRoHS StatusECCN CodeVoltage - Rated DCCurrent RatingPower DissipationRise TimeHeightLengthWidthREACH SVHCLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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IRGS30B60KTRRP9 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~175°C TJTape & Reel (TR)2005e3Last Time Buy1 (Unlimited)2Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors370WGULL WING26030IRGS30B60KPBFR-PSSO-G21SingleCOLLECTORStandard370WMOTOR CONTROLN-CHANNEL2.35V78A600V1.95V600V74 ns400V, 30A, 10 Ω, 15V2.35V @ 15V, 30A237 nsNPT102nC120A46ns/185ns350μJ (on), 825μJ (off)20V5.5V42nsNoROHS3 Compliant----------------- -
11 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-SILICON-55°C~150°C TJTube2004-Obsolete1 (Unlimited)2--90WGULL WING--IRGS6B60KPBFR-PSSO-G21SingleCOLLECTORStandard-MOTOR CONTROLN-CHANNEL2.2V13A600V1.8V-45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)---NoRoHS CompliantEAR99600V13A90W17ns4.703mm10.67mm9.652mmNo SVHCLead Free------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mg--40°C~175°C TJTape & Reel (TR)2015-Obsolete1 (Unlimited)---140W------Single-Standard140W--1.85V20A600V1.97V--400V, 12A, 22Ohm, 15V1.85V @ 15V, 12A--25nC36A31ns/83ns75μJ (on), 225μJ (off)----RoHS Compliant----------D2PAK175°C-40°C68 ns600V32A
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13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mgSILICON-55°C~150°C TJTape & Reel (TR)2004e3Last Time Buy1 (Unlimited)2Matte Tin (Sn) - with Nickel (Ni) barrier-90WGULL WING26030IRGS6B60KDPBFR-PSSO-G21SingleCOLLECTORStandard90WMOTOR CONTROLN-CHANNEL2.2V13A600V-600V45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)---NoROHS3 Compliant---------Lead Free---70 ns--
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