Infineon Technologies IRGB4615DPBF
- Part Number:
- IRGB4615DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497128-IRGB4615DPBF
- Description:
- IGBT 600V 23A 99W TO220
- ECAD Model:
-
- Datasheet:
- IRGx4615DPBF
Infineon Technologies IRGB4615DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGB4615DPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight2.299997g
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2001
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation99W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max99W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.85V
- Max Collector Current23A
- Reverse Recovery Time60 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.55V
- Test Condition400V, 8A, 47 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 8A
- Gate Charge19nC
- Current - Collector Pulsed (Icm)24A
- Td (on/off) @ 25°C30ns/95ns
- Switching Energy70μJ (on), 145μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IRGB4615DPBF Description
IRGB4615DPBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGB4615DPBF is -40°C~175°C TJ and its maximum power dissipation is 99W. IRGB4615DPBF has 3 pins and it is available in Tube packaging way. The Collector Emitter Saturation Voltage of IRGB4615DPBF is 1.55V.
IRGB4615DPBF Features
Switching Energy: 70μJ (on), 145μJ (off)
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Collector Emitter Saturation Voltage: 1.55V
Collector Emitter Voltage (VCEO): 1.85V
IRGB4615DPBF Applications
Appliance Drives
Inverters
UPS
IRGB4615DPBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGB4615DPBF is -40°C~175°C TJ and its maximum power dissipation is 99W. IRGB4615DPBF has 3 pins and it is available in Tube packaging way. The Collector Emitter Saturation Voltage of IRGB4615DPBF is 1.55V.
IRGB4615DPBF Features
Switching Energy: 70μJ (on), 145μJ (off)
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Collector Emitter Saturation Voltage: 1.55V
Collector Emitter Voltage (VCEO): 1.85V
IRGB4615DPBF Applications
Appliance Drives
Inverters
UPS
IRGB4615DPBF More Descriptions
Trans IGBT Chip N-CH 600V 23A 99000mW 3-Pin(3 Tab) TO-220AB Tube
Target Applications: Air Conditioner; Pump; Solar; UPS; Washing Machine; Welding
IGBT, SINGLE, 600V, 23A, TO-220AB
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Target Applications: Air Conditioner; Pump; Solar; UPS; Washing Machine; Welding
IGBT, SINGLE, 600V, 23A, TO-220AB
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
The three parts on the right have similar specifications to IRGB4615DPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRoHS StatusFactory Lead TimeTransistor Element MaterialNumber of TerminationsNumber of ElementsPower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeTurn-Off Delay TimeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)IGBT TypeRadiation HardeningLead FreeTerminationVoltage - Rated DCCurrent RatingView Compare
-
IRGB4615DPBFThrough HoleThrough HoleTO-220-332.299997g-40°C~175°C TJTube2001Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors99WNOT SPECIFIEDNOT SPECIFIEDSingleStandard99WN-CHANNEL1.85V23A60 ns600V1.55V400V, 8A, 47 Ω, 15V1.85V @ 15V, 8A19nC24A30ns/95ns70μJ (on), 145μJ (off)20V6.5V16.51mm10.67mm4.83mmNo SVHCRoHS Compliant-------------------- -
Through HoleThrough HoleTO-220-336.000006g-55°C~175°C TJTube2006Active1 (Unlimited)EAR99Insulated Gate BIP Transistors140W--SingleStandard-N-CHANNEL1.85V24A68 ns600V1.55V400V, 12A, 22 Ω, 15V1.85V @ 15V, 12A25nC48A31ns/83ns75μJ (on), 225μJ (off)20V6.5V9.02mm10.668mm4.826mmNo SVHCROHS3 Compliant16 WeeksSILICON31140WCOLLECTOR40 nsPOWER CONTROL17ns94 nsTO-220AB48 ns143 nsTrenchNoLead Free---
-
Through HoleThrough HoleTO-220-33--55°C~150°C TJTube2004Obsolete1 (Unlimited)--90W--SingleStandard-N-CHANNEL2.2V13A-600V1.8V400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A18.2nC26A25ns/215ns110μJ (on), 135μJ (off)--8.77mm10.54mm4.69mmNo SVHCRoHS Compliant16 WeeksSILICON3190WCOLLECTOR-MOTOR CONTROL17ns-TO-220AB45 ns258 nsNPTNoLead FreeThrough Hole600V13A
-
Through HoleThrough HoleTO-220-33--40°C~175°C TJTube2014Obsolete1 (Unlimited)EAR99-100WNOT SPECIFIEDNOT SPECIFIEDSingleStandard100W-2V21A86 ns650V1.7V400V, 8A, 50 Ω, 15V2V @ 15V, 8A30nC24A30ns/100ns200μJ (on), 90μJ (off)--16.51mm10.67mm4.83mmNo SVHCRoHS Compliant19 Weeks------------------
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