Infineon Technologies IRGB4064DPBF
- Part Number:
- IRGB4064DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587469-IRGB4064DPBF
- Description:
- IGBT 600V 20A 101W TO220AB
- ECAD Model:
-
- Datasheet:
- IRGB4064DPBF
Infineon Technologies IRGB4064DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGB4064DPBF.
- Factory Lead Time99 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation101W
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation101W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time27 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time15ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time79 ns
- Collector Emitter Voltage (VCEO)1.91V
- Max Collector Current20A
- Reverse Recovery Time62 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Turn On Time43 ns
- Test Condition400V, 10A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.91V @ 15V, 10A
- Turn Off Time-Nom (toff)131 ns
- IGBT TypeTrench
- Gate Charge21nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C27ns/79ns
- Switching Energy29μJ (on), 200μJ (off)
- Gate-Emitter Thr Voltage-Max6.5V
- Height9.02mm
- Length10.66mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGB4064DPBF Description
IRGB4064DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGB4064DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRGB4064DPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGB4064DPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
IRGB4064DPBF More Descriptions
Trans IGBT Chip N-CH 600V 20A 101000mW 3-Pin(3 Tab) TO-220AB Tube
IRGB4064DPBF Series 600 V 10 A N-Channel Bipolar Transistor IGBT - TO-220AB
600V UltraFast Copack Trench IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Target Applications: Dryer; Lighting HID; Pump; Solar; UPS; Washing Machine
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.91 V Current release time: 21 ns Power dissipation: 101 W
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:101W ;RoHS Compliant: Yes
IRGB4064DPBF Series 600 V 10 A N-Channel Bipolar Transistor IGBT - TO-220AB
600V UltraFast Copack Trench IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Target Applications: Dryer; Lighting HID; Pump; Solar; UPS; Washing Machine
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.91 V Current release time: 21 ns Power dissipation: 101 W
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:101W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRGB4064DPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryMax Power DissipationNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCCurrent RatingPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxGate-Emitter Voltage-MaxView Compare
-
IRGB4064DPBF99 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON-55°C~175°C TJTube2006Obsolete1 (Unlimited)3Through HoleEAR99Insulated Gate BIP Transistors101W1Single101WCOLLECTORStandard27 nsPOWER CONTROL15nsN-CHANNEL79 ns1.91V20A62 nsTO-220AB600V1.6V43 ns400V, 10A, 22 Ω, 15V1.91V @ 15V, 10A131 nsTrench21nC40A27ns/79ns29μJ (on), 200μJ (off)6.5V9.02mm10.66mm4.82mmNo SVHCNoRoHS CompliantLead Free------- -
16 WeeksThrough HoleThrough HoleTO-220-33-SILICON-55°C~150°C TJTube2004Obsolete1 (Unlimited)3Through Hole--90W1Single90WCOLLECTORStandard-MOTOR CONTROL17nsN-CHANNEL-2.2V13A-TO-220AB600V1.8V45 ns400V, 5A, 100 Ω, 15V2.2V @ 15V, 5A258 nsNPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)-8.77mm10.54mm4.69mmNo SVHCNoRoHS CompliantLead Free600V13A----
-
19 WeeksThrough HoleThrough HoleTO-220-33---40°C~175°C TJTube2014Obsolete1 (Unlimited)--EAR99-100W-Single--Standard-----2V21A86 ns-650V1.7V-400V, 8A, 50 Ω, 15V2V @ 15V, 8A--30nC24A30ns/100ns200μJ (on), 90μJ (off)-16.51mm10.67mm4.83mmNo SVHC-RoHS Compliant---NOT SPECIFIEDNOT SPECIFIED100W-
-
-Through HoleThrough HoleTO-220-332.299997g--40°C~175°C TJTube2001Obsolete1 (Unlimited)--EAR99Insulated Gate BIP Transistors99W-Single--Standard---N-CHANNEL-1.85V23A60 ns-600V1.55V-400V, 8A, 47 Ω, 15V1.85V @ 15V, 8A--19nC24A30ns/95ns70μJ (on), 145μJ (off)6.5V16.51mm10.67mm4.83mmNo SVHC-RoHS Compliant---NOT SPECIFIEDNOT SPECIFIED99W20V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
06 September 2023
NE5532P Functions, Parameters, Advantages and Disadvantages
Ⅰ. NE5532P descriptionNE5532P is a high-performance operational amplifier with excellent DC and AC characteristics. It features extremely low noise, high output drive capability, high unity gain and maximum... -
06 September 2023
TDA8356 Specifications, Characteristics and Application Circuits
Ⅰ. Overview of TDA8356TDA8356 is a new field scanning output integrated circuit produced by Philips of the Netherlands. It is widely used in various domestic and imported large-screen... -
06 September 2023
All You Need to Know About MPS2222A
Ⅰ. Overview of MPS2222AMPS2222A is an NPN transistor produced by Fairchild Semiconductor. Its main features include power dissipation of 0.625W; collector current of 0.6A; maximum withstand voltage of... -
06 September 2023
A4988 Characteristics, Application and Basic Principle
A4988 is an efficient and commonly used stepper motor driver chip, widely used in 3D printing and CNC machine tools and other fields. We will discuss in depth...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.