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IRGB4607DPBF

Infineon Technologies IRGB4607DPBF

Part Number:
IRGB4607DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497099-IRGB4607DPBF
Description:
IGBT 600V 11A 58W TO220
ECAD Model:
Datasheet:
IRGx4607DPbF

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Specifications
Infineon Technologies IRGB4607DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGB4607DPBF.
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    58W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    58W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.05V
  • Max Collector Current
    11A
  • Reverse Recovery Time
    48 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.75V
  • Turn On Time
    51 ns
  • Test Condition
    400V, 4A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.05V @ 15V, 4A
  • Turn Off Time-Nom (toff)
    95 ns
  • Gate Charge
    9nC
  • Current - Collector Pulsed (Icm)
    12A
  • Td (on/off) @ 25°C
    27ns/120ns
  • Switching Energy
    140μJ (on), 62μJ (off)
  • Height
    16.51mm
  • Length
    10.67mm
  • Width
    4.83mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
Description
IRGB4607DPBF Description
IRGB4607DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of switching frequencies. 

IRGB4607DPBF Features
5μs short circuit SOA Square RBSOA Positive VCE(ON) temperature coefficient Low VCE(ON) and switching losses Package: TO-220AB

IRGB4607DPBF Applications
Industrial motor drive UPS Solar Inverters Welding 
IRGB4607DPBF More Descriptions
Trans IGBT Chip N-CH 600V 11A 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 11A, TO-220AB-3; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3P
Product Comparison
The three parts on the right have similar specifications to IRGB4607DPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Termination
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Turn On Delay Time
    Clamping Voltage
    Rise Time
    Turn-Off Delay Time
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    Lead Free
    IGBT Type
    View Compare
  • IRGB4607DPBF
    IRGB4607DPBF
    Infineon Technologies
    6 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    3
    EAR99
    58W
    NOT SPECIFIED
    NOT SPECIFIED
    1
    Single
    COLLECTOR
    Standard
    58W
    POWER CONTROL
    N-CHANNEL
    2.05V
    11A
    48 ns
    TO-220AB
    600V
    1.75V
    51 ns
    400V, 4A, 100 Ω, 15V
    2.05V @ 15V, 4A
    95 ns
    9nC
    12A
    27ns/120ns
    140μJ (on), 62μJ (off)
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGB14C40LPBF
    IRGB14C40LPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    6.000006g
    SILICON
    -40°C~175°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    EAR99
    125W
    -
    -
    1
    Single
    COLLECTOR
    Logic
    -
    AUTOMOTIVE IGNITION
    N-CHANNEL
    1.75V
    20A
    -
    TO-220AB
    430V
    1.4V
    3700 ns
    -
    1.75V @ 5V, 14A
    -
    27nC
    -
    900ns/6μs
    -
    15.24mm
    10.5156mm
    4.69mm
    No SVHC
    ROHS3 Compliant
    Through Hole
    LOW SATURATION VOLTAGE
    Insulated Gate BIP Transistors
    430V
    14A
    125W
    900 ns
    430V
    2.4μs
    6 μs
    12V
    2.2V
    No
    Contains Lead, Lead Free
    -
    IRGB4607DPBF vs IRGB14C40LPBF
  • IRGB6B60KPBF
    IRGB6B60KPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    3
    -
    90W
    -
    -
    1
    Single
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    2.2V
    13A
    -
    TO-220AB
    600V
    1.8V
    45 ns
    400V, 5A, 100 Ω, 15V
    2.2V @ 15V, 5A
    258 ns
    18.2nC
    26A
    25ns/215ns
    110μJ (on), 135μJ (off)
    8.77mm
    10.54mm
    4.69mm
    No SVHC
    RoHS Compliant
    Through Hole
    -
    -
    600V
    13A
    90W
    -
    -
    17ns
    -
    -
    -
    No
    Lead Free
    NPT
    IRGB4607DPBF vs IRGB6B60KPBF
  • IRGB4615DPBF
    IRGB4615DPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    -
    -40°C~175°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    EAR99
    99W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Single
    -
    Standard
    99W
    -
    N-CHANNEL
    1.85V
    23A
    60 ns
    -
    600V
    1.55V
    -
    400V, 8A, 47 Ω, 15V
    1.85V @ 15V, 8A
    -
    19nC
    24A
    30ns/95ns
    70μJ (on), 145μJ (off)
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    RoHS Compliant
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    -
    -
    -
    20V
    6.5V
    -
    -
    -
    IRGB4607DPBF vs IRGB4615DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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