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IRFP90N20DPBF

Infineon Technologies IRFP90N20DPBF

Part Number:
IRFP90N20DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479006-IRFP90N20DPBF
Description:
MOSFET N-CH 200V 94A TO-247AC
ECAD Model:
Datasheet:
IRFP90N20DPBF

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Specifications
Infineon Technologies IRFP90N20DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP90N20DPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Bulk
  • Series
    HEXFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    23mOhm
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    94A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    580W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    580W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    23 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 56A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6040pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    94A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    270nC @ 10V
  • Rise Time
    160ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    79 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    94A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    90A
  • Drain to Source Breakdown Voltage
    200V
  • Dual Supply Voltage
    200V
  • Recovery Time
    340 ns
  • Nominal Vgs
    5 V
  • Height
    20.3mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP90N20DPBF Description   Channel MOSFET IRFP90N20DPBF is a kind of MOSFET, in which the channel of MOSFET is composed of most electrons as current carriers. When the MOSFET is activated and turned on, most of the current flowing is the electrons that pass through the channel.   IRFP90N20DPBF  Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective Coss to Simplify Design,(See App.Note AN1001) Fully Characterized Avalanche Voltage and Current   IRFP90N20DPBF  Applications
electrons
   


IRFP90N20DPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS /-30V
Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55 175 deg.C; THT; TO247AC
Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3 Tab TO-247AC
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 580 W
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 90A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
N Channel Mosfet, 200V, 94A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:94A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFP90N20DPBF.
MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP90N20DPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFP90N20DPBF
    IRFP90N20DPBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Bulk
    HEXFET®
    2001
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    23mOhm
    MATTE TIN OVER NICKEL
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    250
    94A
    30
    1
    1
    580W Tc
    Single
    ENHANCEMENT MODE
    580W
    DRAIN
    23 ns
    N-Channel
    SWITCHING
    23m Ω @ 56A, 10V
    5V @ 250μA
    6040pF @ 25V
    94A Tc
    270nC @ 10V
    160ns
    10V
    ±30V
    79 ns
    43 ns
    94A
    5V
    TO-247AC
    30V
    90A
    200V
    200V
    340 ns
    5 V
    20.3mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP350LC
    IRFP350LC
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    1
    190W Tc
    Single
    -
    190W
    -
    14 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    -
    30V
    -
    400V
    -
    -
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    TO-247-3
    38.000013g
    150°C
    -55°C
    400V
    2.2nF
    300mOhm
    300 mΩ
    IRFP90N20DPBF vs IRFP350LC
  • IRFP344PBF
    IRFP344PBF
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    450V
    MOSFET (Metal Oxide)
    -
    9.5A
    -
    -
    1
    150W Tc
    Single
    -
    150W
    -
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    -
    20V
    -
    450V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    TO-247-3
    38.000013g
    150°C
    -55°C
    450V
    1.4nF
    630mOhm
    630 mΩ
    IRFP90N20DPBF vs IRFP344PBF
  • IRFP350
    IRFP350
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2015
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    400V
    MOSFET (Metal Oxide)
    -
    16A
    -
    -
    1
    190W Tc
    Single
    -
    190W
    -
    16 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    -
    20V
    -
    400V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    TO-247-3
    38.000013g
    150°C
    -55°C
    400V
    2.6nF
    300mOhm
    300 mΩ
    IRFP90N20DPBF vs IRFP350
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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