Infineon Technologies IRFP4468PBF

IRFP4468PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 740 mJ.A device's maximal input capacitance is 19860pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 290A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 160 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 52 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRFP4468PBF Features
the avalanche energy rating (Eas) is 740 mJ
a continuous drain current (ID) of 290A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 160 ns
a threshold voltage of 4V


IRFP4468PBF Applications
There are a lot of Infineon Technologies
IRFP4468PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples