Vishay Siliconix IRFD220PBF
- Part Number:
- IRFD220PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478734-IRFD220PBF
- Description:
- MOSFET N-CH 200V 800MA 4-DIP
- Datasheet:
- IRFD220PBF
Vishay Siliconix IRFD220PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD220PBF.
- Factory Lead Time8 Weeks
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2012
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs800mOhm @ 480mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds260pF @ 25V
- Current - Continuous Drain (Id) @ 25°C800mA Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRFD220PBF Overview
The maximum input capacitance of this device is 260pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD220PBF Features
a 200V drain to source voltage (Vdss)
IRFD220PBF Applications
There are a lot of Vishay Siliconix
IRFD220PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 260pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD220PBF Features
a 200V drain to source voltage (Vdss)
IRFD220PBF Applications
There are a lot of Vishay Siliconix
IRFD220PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFD220PBF More Descriptions
Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET N-CH 200V 800MA 4-DIP | Siliconix / Vishay IRFD220PBF
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
N Channel Mosfet, 200V, 800Ma, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:800Ma; On Resistance Rds(On):0.8Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:800mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:6.4A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
MOSFET N-CH 200V 800MA 4-DIP | Siliconix / Vishay IRFD220PBF
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
N Channel Mosfet, 200V, 800Ma, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:800Ma; On Resistance Rds(On):0.8Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:800mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:6.4A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFD220PBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionPin CountJESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Nominal VgsNumber of ChannelsView Compare
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IRFD220PBF8 WeeksThrough Hole4-DIP (0.300, 7.62mm)4-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2012Active1 (Unlimited)MOSFET (Metal Oxide)1W TaN-Channel800mOhm @ 480mA, 10V4V @ 250μA260pF @ 25V800mA Ta14nC @ 10V200V10V±20VROHS3 Compliant--------------------------------------------
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8 WeeksThrough Hole4-DIP (0.300, 7.62mm)4-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2008Active1 (Unlimited)MOSFET (Metal Oxide)1W TaP-Channel1.5Ohm @ 340mA, 10V4V @ 250μA340pF @ 25V560mA Ta15nC @ 10V200V10V±20VROHS3 CompliantThrough Hole41.5Ohm150°C-55°C-200V-560mA1Single1W8.8 ns27ns19 ns7.3 ns-560mA-4V20V200V340pF1.5Ohm1.5 Ω3.37mm6.29mm5mmUnknownNoLead Free----------------
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8 WeeksThrough Hole4-DIP (0.300, 7.62mm)--55°C~175°C TJTube2004Active1 (Unlimited)MOSFET (Metal Oxide)1.3W TaP-Channel1.2 Ω @ 420mA, 10V4V @ 250μA200pF @ 25V700mA Ta8.7nC @ 10V-10V±20VROHS3 CompliantThrough Hole41.2Ohm---100V-700mA1Single1.3W10 ns27ns27 ns15 ns-700mA-4V20V100V---3.3782mm6.2738mm5.0038mmUnknownNoLead FreeSILICONyes3EAR99AVALANCHE RATEDOther TransistorsDUAL3R-PDIP-T3ENHANCEMENT MODEDRAINSWITCHING0.7A5.6A-4 V-
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-Through Hole4-DIP (0.300, 7.62mm)4-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)MOSFET (Metal Oxide)1W TaN-Channel3Ohm @ 220mA, 10V4V @ 250μA360pF @ 25V370mA Ta24nC @ 10V500V10V±20VNon-RoHS CompliantThrough Hole4-150°C-55°C500V460mA--1.3W8 ns8.6ns8.6 ns33 ns370mA-20V500V360pF3Ohm3 Ω3.37mm5mm6.29mm-NoContains Lead---------------1
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