IRFD220PBF

Vishay Siliconix IRFD220PBF

Part Number:
IRFD220PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478734-IRFD220PBF
Description:
MOSFET N-CH 200V 800MA 4-DIP
ECAD Model:
Datasheet:
IRFD220PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRFD220PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD220PBF.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1W Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    800mOhm @ 480mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    260pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    800mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRFD220PBF Overview
The maximum input capacitance of this device is 260pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFD220PBF Features
a 200V drain to source voltage (Vdss)


IRFD220PBF Applications
There are a lot of Vishay Siliconix
IRFD220PBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFD220PBF More Descriptions
Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET N-CH 200V 800MA 4-DIP | Siliconix / Vishay IRFD220PBF
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
N Channel Mosfet, 200V, 800Ma, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:800Ma; On Resistance Rds(On):0.8Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:800mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:6.4A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFD220PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Mount
    Number of Pins
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Position
    Pin Count
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Number of Channels
    View Compare
  • IRFD220PBF
    IRFD220PBF
    8 Weeks
    Through Hole
    4-DIP (0.300, 7.62mm)
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2012
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1W Ta
    N-Channel
    800mOhm @ 480mA, 10V
    4V @ 250μA
    260pF @ 25V
    800mA Ta
    14nC @ 10V
    200V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9220PBF
    8 Weeks
    Through Hole
    4-DIP (0.300, 7.62mm)
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1W Ta
    P-Channel
    1.5Ohm @ 340mA, 10V
    4V @ 250μA
    340pF @ 25V
    560mA Ta
    15nC @ 10V
    200V
    10V
    ±20V
    ROHS3 Compliant
    Through Hole
    4
    1.5Ohm
    150°C
    -55°C
    -200V
    -560mA
    1
    Single
    1W
    8.8 ns
    27ns
    19 ns
    7.3 ns
    -560mA
    -4V
    20V
    200V
    340pF
    1.5Ohm
    1.5 Ω
    3.37mm
    6.29mm
    5mm
    Unknown
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9110PBF
    8 Weeks
    Through Hole
    4-DIP (0.300, 7.62mm)
    -
    -55°C~175°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.3W Ta
    P-Channel
    1.2 Ω @ 420mA, 10V
    4V @ 250μA
    200pF @ 25V
    700mA Ta
    8.7nC @ 10V
    -
    10V
    ±20V
    ROHS3 Compliant
    Through Hole
    4
    1.2Ohm
    -
    -
    -100V
    -700mA
    1
    Single
    1.3W
    10 ns
    27ns
    27 ns
    15 ns
    -700mA
    -4V
    20V
    100V
    -
    -
    -
    3.3782mm
    6.2738mm
    5.0038mm
    Unknown
    No
    Lead Free
    SILICON
    yes
    3
    EAR99
    AVALANCHE RATED
    Other Transistors
    DUAL
    3
    R-PDIP-T3
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.7A
    5.6A
    -4 V
    -
  • IRFD420
    -
    Through Hole
    4-DIP (0.300, 7.62mm)
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1W Ta
    N-Channel
    3Ohm @ 220mA, 10V
    4V @ 250μA
    360pF @ 25V
    370mA Ta
    24nC @ 10V
    500V
    10V
    ±20V
    Non-RoHS Compliant
    Through Hole
    4
    -
    150°C
    -55°C
    500V
    460mA
    -
    -
    1.3W
    8 ns
    8.6ns
    8.6 ns
    33 ns
    370mA
    -
    20V
    500V
    360pF
    3Ohm
    3 Ω
    3.37mm
    5mm
    6.29mm
    -
    No
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 28 September 2023

    TIP35C Footprint, Package, Application and Other Details

    Ⅰ. Overview of TIP35CⅡ. Symbol and footprint of TIP35CⅢ. Technical parametersⅣ. Features of TIP35CⅤ. Pinout and package of TIP35CⅥ. Working principle of TIP35C audio power amplifierⅦ. Application of...
  • 07 October 2023

    An Introduction to TDA7266SA Dual Bridge Amplifier

    Ⅰ. What is TDA7266SA?Ⅱ. Symbol, footprint and pin connection of TDA7266SAⅢ. Technical parametersⅣ. Features of TDA7266SAⅤ. How to configure the gain of TDA7266SA?Ⅵ. How is the short circuit...
  • 07 October 2023

    How does IRF640 differ from IRF740?

    Ⅰ. What is MOSFET?Ⅱ. Overview of IRF640Ⅲ. Overview of IRF740Ⅳ. IRF640 vs IRF740: SymbolⅤ. IRF640 vs IRF740: Technical parametersⅥ. IRF640 vs IRF740: FeaturesⅦ. IRF640 vs IRF740: Working principleⅧ....
  • 08 October 2023

    2N3773 Transistor Equivalent, Features and Applications

    Ⅰ. 2N3773 transistor overviewⅡ. Symbol and pin connection of 2N3773Ⅲ. Technical parametersⅣ. What are the features of 2N3773?Ⅴ. How does the 2N3773 achieve amplification and switching functions in...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.