Vishay Siliconix IRFD010

IRFD010 Overview
A device's maximum input capacitance is 250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=50V, and this device has a drain-to-source breakdown voltage of 50V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFD010 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 50V voltage
single MOSFETs transistor is 200mOhm
a 50V drain to source voltage (Vdss)


IRFD010 Applications
There are a lot of Vishay Siliconix
IRFD010 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters