Infineon Technologies IPA65R660CFDXKSA1

IPA65R660CFDXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 115 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 615pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 17A.A normal operation of the DS requires keeping the breakdown voltage above 650V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPA65R660CFDXKSA1 Features
the avalanche energy rating (Eas) is 115 mJ
based on its rated peak drain current 17A.
a 650V drain to source voltage (Vdss)


IPA65R660CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R660CFDXKSA1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching