Infineon Technologies IPA65R400CEXKSA1
- Part Number:
- IPA65R400CEXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851210-IPA65R400CEXKSA1
- Description:
- MOSFET N-CH 650V TO220-3
- ECAD Model:
-
- Datasheet:
- IPA65R400CEXKSA1
Infineon Technologies IPA65R400CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA65R400CEXKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max31W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3.5V @ 320μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Max Dual Supply Voltage650V
- Drain-source On Resistance-Max0.4Ohm
- Pulsed Drain Current-Max (IDM)30A
- Avalanche Energy Rating (Eas)215 mJ
- FET FeatureSuper Junction
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA65R400CEXKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R400CEXKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 30A.
IPA65R400CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R400CEXKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R400CEXKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 30A.
IPA65R400CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R400CEXKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPA65R400CEXKSA1 More Descriptions
Trans MOSFET N-CH 650V 15.1A 3-Pin(3 Tab) TO-220FP Tube, PG-TO220-3, RoHSInfineon SCT
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.3pF 50volts C0G /-0.25pF
Mosfet, N-Ch, 650V, 15.1A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:15.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.36Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R400CEXKSA1
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.3pF 50volts C0G /-0.25pF
Mosfet, N-Ch, 650V, 15.1A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:15.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.36Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R400CEXKSA1
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
The three parts on the right have similar specifications to IPA65R400CEXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeMax Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET FeatureRoHS StatusLead FreeNumber of PinsTurn On Delay TimeCurrent - Continuous Drain (Id) @ 25°CRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Pin CountQualification StatusPower DissipationDrain to Source Voltage (Vdss)View Compare
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IPA65R400CEXKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™1999e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE31W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING400m Ω @ 3.2A, 10V3.5V @ 320μAHalogen Free710pF @ 100V39nC @ 10V10V±20VTO-220AB650V0.4Ohm30A215 mJSuper JunctionROHS3 CompliantLead Free------------- -
18 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING125m Ω @ 11.6A, 10V4.5V @ 960μAHalogen Free2660pF @ 100V56nC @ 10V10V±20VTO-220AB600V0.125Ohm87A--ROHS3 CompliantLead Free314 ns30A Tc9ns5 ns44 ns30A30V----
-
18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-EAR99Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---34W Tc--N-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V70nC @ 10V10V±20V-600V----ROHS3 CompliantLead Free320 ns37.9A Tc10ns5 ns50 ns37.9A30V----
-
16 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 1.1mAHalogen Free1520pF @ 100V43nC @ 10V10V±20VTO-220AB600V----ROHS3 CompliantLead Free310 ns16A Tc5ns-50 ns16A20V3Not Qualified34W650V
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