IPA65R380C6XKSA1

Infineon Technologies IPA65R380C6XKSA1

Part Number:
IPA65R380C6XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2851824-IPA65R380C6XKSA1
Description:
MOSFET N-CH 650V 10.6A TO220
ECAD Model:
Datasheet:
IPA65R380C6XKSA1

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Specifications
Infineon Technologies IPA65R380C6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA65R380C6XKSA1.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    31W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    380m Ω @ 3.2A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 320μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    710pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    10.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    10.6A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    650V
  • Pulsed Drain Current-Max (IDM)
    29A
  • Avalanche Energy Rating (Eas)
    215 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPA65R380C6XKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.This device has a continuous drain current (ID) of [10.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 29A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).

IPA65R380C6XKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 110 ns
based on its rated peak drain current 29A.


IPA65R380C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R380C6XKSA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPA65R380C6XKSA1 More Descriptions
Trans MOSFET N-CH 700V 10.6A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N-Ch, 650V, 10.6A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R380C6XKSA1
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHSInfineon SCT
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Product Comparison
The three parts on the right have similar specifications to IPA65R380C6XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Surface Mount
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Terminal Form
    Element Configuration
    Rise Time
    Polarity/Channel Type
    Drain to Source Breakdown Voltage
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Height
    Length
    Width
    ECCN Code
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • IPA65R380C6XKSA1
    IPA65R380C6XKSA1
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    31W Tc
    ENHANCEMENT MODE
    ISOLATED
    12 ns
    N-Channel
    SWITCHING
    380m Ω @ 3.2A, 10V
    3.5V @ 320μA
    Halogen Free
    710pF @ 100V
    10.6A Tc
    39nC @ 10V
    10V
    ±20V
    11 ns
    110 ns
    10.6A
    TO-220AB
    20V
    650V
    29A
    215 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA60R520C6
    12 Weeks
    -
    -
    TO-220-3
    3
    -
    -
    -
    -
    2011
    -
    yes
    Active
    -
    3
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    -
    29W
    ENHANCEMENT MODE
    ISOLATED
    13 ns
    -
    SWITCHING
    -
    -
    Halogen Free
    -
    -
    -
    -
    -
    14 ns
    85 ns
    8.1A
    TO-220AB
    20V
    -
    22A
    -
    RoHS Compliant
    Lead Free
    NO
    150°C
    -55°C
    FET General Purpose Power
    THROUGH-HOLE
    Single
    10ns
    N-CHANNEL
    600V
    METAL-OXIDE SEMICONDUCTOR
    520mOhm
    520 mΩ
    512pF
    16.15mm
    10.65mm
    4.85mm
    -
    -
    -
  • IPA60R099P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    34W Tc
    -
    -
    20 ns
    N-Channel
    -
    99m Ω @ 14.5A, 10V
    4.5V @ 1.21mA
    Halogen Free
    3330pF @ 100V
    37.9A Tc
    70nC @ 10V
    10V
    ±20V
    5 ns
    50 ns
    37.9A
    -
    30V
    600V
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    10ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    EAR99
    -
    -
  • IPA60R520CPXKSA1
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    30W Tc
    -
    -
    -
    N-Channel
    -
    520mOhm @ 3.8A, 10V
    3.5V @ 250μA
    -
    630pF @ 100V
    6.8A Tc
    31nC @ 10V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO220-FP
    600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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