Infineon Technologies IPA65R380C6XKSA1
- Part Number:
- IPA65R380C6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851824-IPA65R380C6XKSA1
- Description:
- MOSFET N-CH 650V 10.6A TO220
- Datasheet:
- IPA65R380C6XKSA1
Infineon Technologies IPA65R380C6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA65R380C6XKSA1.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max31W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs380m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3.5V @ 320μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
- Current - Continuous Drain (Id) @ 25°C10.6A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)10.6A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage650V
- Pulsed Drain Current-Max (IDM)29A
- Avalanche Energy Rating (Eas)215 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA65R380C6XKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.This device has a continuous drain current (ID) of [10.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 29A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R380C6XKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 110 ns
based on its rated peak drain current 29A.
IPA65R380C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R380C6XKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.This device has a continuous drain current (ID) of [10.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 29A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R380C6XKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 110 ns
based on its rated peak drain current 29A.
IPA65R380C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R380C6XKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPA65R380C6XKSA1 More Descriptions
Trans MOSFET N-CH 700V 10.6A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N-Ch, 650V, 10.6A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R380C6XKSA1
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHSInfineon SCT
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Mosfet, N-Ch, 650V, 10.6A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R380C6XKSA1
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHSInfineon SCT
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
The three parts on the right have similar specifications to IPA65R380C6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormElement ConfigurationRise TimePolarity/Channel TypeDrain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthECCN CodeSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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IPA65R380C6XKSA112 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE31W TcENHANCEMENT MODEISOLATED12 nsN-ChannelSWITCHING380m Ω @ 3.2A, 10V3.5V @ 320μAHalogen Free710pF @ 100V10.6A Tc39nC @ 10V10V±20V11 ns110 ns10.6ATO-220AB20V650V29A215 mJROHS3 CompliantLead Free--------------------
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12 Weeks--TO-220-33----2011-yesActive-3---NOT SPECIFIEDNOT SPECIFIED3Not Qualified1-29WENHANCEMENT MODEISOLATED13 ns-SWITCHING--Halogen Free-----14 ns85 ns8.1ATO-220AB20V-22A-RoHS CompliantLead FreeNO150°C-55°CFET General Purpose PowerTHROUGH-HOLESingle10nsN-CHANNEL600VMETAL-OXIDE SEMICONDUCTOR520mOhm520 mΩ512pF16.15mm10.65mm4.85mm---
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3--55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED----34W Tc--20 nsN-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10V±20V5 ns50 ns37.9A-30V600V--ROHS3 CompliantLead Free------10ns---------EAR99--
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--Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------30W Tc---N-Channel-520mOhm @ 3.8A, 10V3.5V @ 250μA-630pF @ 100V6.8A Tc31nC @ 10V10V±20V--------ROHS3 Compliant------------------PG-TO220-FP600V
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