Infineon Technologies IPA65R110CFDXKSA1

IPA65R110CFDXKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 845 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3240pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31.2A amps.In this device, the drain-source breakdown voltage is 700V and VGS=700V, so the drain-source breakdown voltage is 700V in this case.It is [68 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 99.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA65R110CFDXKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
a 650V drain to source voltage (Vdss)


IPA65R110CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R110CFDXKSA1 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies