Infineon Technologies IPA60R280P6XKSA1
- Part Number:
- IPA60R280P6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482060-IPA60R280P6XKSA1
- Description:
- MOSFET N-CH 600V TO220FP-3
- ECAD Model:
-
- Datasheet:
- IPA60R280P6XKSA1
Infineon Technologies IPA60R280P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R280P6XKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Supplier Device PackagePG-TO220-FP
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P6
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max32W Tc
- Power Dissipation32W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id4.5V @ 430μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 100V
- Current - Continuous Drain (Id) @ 25°C13.8A Tc
- Gate Charge (Qg) (Max) @ Vgs25.5nC @ 10V
- Rise Time6ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)13.8A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- Input Capacitance1.19nF
- Drain to Source Resistance252mOhm
- Rds On Max280 mΩ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R280P6XKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1190pF @ 100V.This device has a continuous drain current (ID) of [13.8A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.MOSFETs have 252mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPA60R280P6XKSA1 Features
a continuous drain current (ID) of 13.8A
the turn-off delay time is 36 ns
single MOSFETs transistor is 252mOhm
a 600V drain to source voltage (Vdss)
IPA60R280P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R280P6XKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1190pF @ 100V.This device has a continuous drain current (ID) of [13.8A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.MOSFETs have 252mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPA60R280P6XKSA1 Features
a continuous drain current (ID) of 13.8A
the turn-off delay time is 36 ns
single MOSFETs transistor is 252mOhm
a 600V drain to source voltage (Vdss)
IPA60R280P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R280P6XKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPA60R280P6XKSA1 More Descriptions
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-220-3FP
Trans MOSFET N-CH 600V 13.8A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Trans MOSFET N-CH 600V 13.8A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPA60R280P6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Pbfree CodeECCN CodePin CountQualification StatusView Compare
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IPA60R280P6XKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3PG-TO220-FP6.000006g-55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1132W Tc32W12 nsN-Channel280mOhm @ 5.2A, 10V4.5V @ 430μAHalogen Free1190pF @ 100V13.8A Tc25.5nC @ 10V6ns600V10V±20V6 ns36 ns13.8A20V600V1.19nF252mOhm280 mΩROHS3 CompliantLead Free--------------------- -
18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ C72005Active1 (Unlimited)--MOSFET (Metal Oxide)1-34W Tc-17 nsN-Channel65m Ω @ 17.1A, 10V4V @ 850μAHalogen Free3020pF @ 400V15A Tc64nC @ 10V14ns-10V±20V7 ns72 ns15A20V650V---ROHS3 CompliantLead FreeSILICONe33Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB19A0.065Ohm145A171 mJ----
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)--MOSFET (Metal Oxide)--34W Tc-20 nsN-Channel99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10ns-10V±20V5 ns50 ns37.9A30V600V---ROHS3 CompliantLead Free-e3-Tin (Sn)-NOT SPECIFIEDNOT SPECIFIED---------yesEAR99--
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16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™2007Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)1-34W Tc34W10 nsN-Channel199m Ω @ 9.9A, 10V3.5V @ 1.1mAHalogen Free1520pF @ 100V16A Tc43nC @ 10V5ns650V10V±20V-50 ns16A20V600V---ROHS3 CompliantLead FreeSILICONe33Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB----yesEAR993Not Qualified
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