Infineon Technologies IPA60R230P6XKSA1
- Part Number:
- IPA60R230P6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484374-IPA60R230P6XKSA1
- Description:
- MOSFET N-CH 600V TO220FP-3
- Datasheet:
- IPA60R230P6XKSA1
Infineon Technologies IPA60R230P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R230P6XKSA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Supplier Device PackagePG-TO220-FP
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P6
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max33W Tc
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs230mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 530μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1450pF @ 100V
- Current - Continuous Drain (Id) @ 25°C16.8A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time7ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)16.8A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- Drain to Source Breakdown Voltage600V
- Input Capacitance1.45nF
- Drain to Source Resistance207mOhm
- Rds On Max230 mΩ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R230P6XKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 207mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA60R230P6XKSA1 Features
a continuous drain current (ID) of 16.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)
IPA60R230P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R230P6XKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 207mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA60R230P6XKSA1 Features
a continuous drain current (ID) of 16.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)
IPA60R230P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R230P6XKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPA60R230P6XKSA1 More Descriptions
Single N-Channel 600 V 230 mOhm 31 nC CoolMOS Power Mosfet - TO-220-3FP
Trans MOSFET N-CH 600V 16.8A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Trans MOSFET N-CH 600V 16.8A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPA60R230P6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)View Compare
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IPA60R230P6XKSA118 WeeksSurface MountThrough HoleTO-220-3 Full Pack3PG-TO220-FP6.000006g-55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)133W Tc12 nsN-Channel230mOhm @ 6.4A, 10V4.5V @ 530μAHalogen Free1450pF @ 100V16.8A Tc31nC @ 10V7ns600V10V±20V6 ns38 ns16.8A20V600V600V1.45nF207mOhm230 mΩROHS3 CompliantLead Free------------------
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)--MOSFET (Metal Oxide)-34W Tc14 nsN-Channel125m Ω @ 11.6A, 10V4.5V @ 960μAHalogen Free2660pF @ 100V30A Tc56nC @ 10V9ns-10V±20V5 ns44 ns30A30V600V----ROHS3 CompliantLead FreeSILICONe3yes3EAR99Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB0.125Ohm87A
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)--MOSFET (Metal Oxide)-34W Tc20 nsN-Channel99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10ns-10V±20V5 ns50 ns37.9A30V600V----ROHS3 CompliantLead Free-e3yes-EAR99Tin (Sn)-NOT SPECIFIEDNOT SPECIFIED--------
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--Through HoleTO-220-3 Full Pack-PG-TO220-FP--55°C~150°C TJTubeCoolMOS™-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-30W Tc-N-Channel520mOhm @ 3.8A, 10V3.5V @ 250μA-630pF @ 100V6.8A Tc31nC @ 10V-600V10V±20V---------ROHS3 Compliant------------------
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