IPA60R230P6XKSA1

Infineon Technologies IPA60R230P6XKSA1

Part Number:
IPA60R230P6XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2484374-IPA60R230P6XKSA1
Description:
MOSFET N-CH 600V TO220FP-3
ECAD Model:
Datasheet:
IPA60R230P6XKSA1

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Specifications
Infineon Technologies IPA60R230P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R230P6XKSA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Supplier Device Package
    PG-TO220-FP
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™ P6
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    33W Tc
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    230mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 530μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    1450pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    16.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    7ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    16.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    600V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    1.45nF
  • Drain to Source Resistance
    207mOhm
  • Rds On Max
    230 mΩ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPA60R230P6XKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 207mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA60R230P6XKSA1 Features
a continuous drain current (ID) of 16.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)


IPA60R230P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R230P6XKSA1 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPA60R230P6XKSA1 More Descriptions
Single N-Channel 600 V 230 mOhm 31 nC CoolMOS™ Power Mosfet - TO-220-3FP
Trans MOSFET N-CH 600V 16.8A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Product Comparison
The three parts on the right have similar specifications to IPA60R230P6XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    View Compare
  • IPA60R230P6XKSA1
    IPA60R230P6XKSA1
    18 Weeks
    Surface Mount
    Through Hole
    TO-220-3 Full Pack
    3
    PG-TO220-FP
    6.000006g
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    33W Tc
    12 ns
    N-Channel
    230mOhm @ 6.4A, 10V
    4.5V @ 530μA
    Halogen Free
    1450pF @ 100V
    16.8A Tc
    31nC @ 10V
    7ns
    600V
    10V
    ±20V
    6 ns
    38 ns
    16.8A
    20V
    600V
    600V
    1.45nF
    207mOhm
    230 mΩ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA60R125P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    34W Tc
    14 ns
    N-Channel
    125m Ω @ 11.6A, 10V
    4.5V @ 960μA
    Halogen Free
    2660pF @ 100V
    30A Tc
    56nC @ 10V
    9ns
    -
    10V
    ±20V
    5 ns
    44 ns
    30A
    30V
    600V
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    yes
    3
    EAR99
    Tin (Sn)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    0.125Ohm
    87A
  • IPA60R099P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    34W Tc
    20 ns
    N-Channel
    99m Ω @ 14.5A, 10V
    4.5V @ 1.21mA
    Halogen Free
    3330pF @ 100V
    37.9A Tc
    70nC @ 10V
    10ns
    -
    10V
    ±20V
    5 ns
    50 ns
    37.9A
    30V
    600V
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    e3
    yes
    -
    EAR99
    Tin (Sn)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA60R520CPXKSA1
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    PG-TO220-FP
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    30W Tc
    -
    N-Channel
    520mOhm @ 3.8A, 10V
    3.5V @ 250μA
    -
    630pF @ 100V
    6.8A Tc
    31nC @ 10V
    -
    600V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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