Infineon Technologies IPA60R160P6XKSA1

Name: IPA60R160P6XKSA1
Brand: Infineon Technologies
SKU: 2482186-IPA60R160P6XKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA60R160P6XKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482186-IPA60R160P6XKSA1

Description:: MOSFET N-CH 600V TO220FP-3

ECAD Model:

Datasheet:: IPA60R160P6XKSA1

Specifications

Infineon Technologies IPA60R160P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R160P6XKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Supplier Device Package
PG-TO220-FP
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ P6
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
34W Tc
Turn On Delay Time
12.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 750μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2080pF @ 100V
Current - Continuous Drain (Id) @ 25°C
23.8A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Rise Time
7.6ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5.8 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
23.8A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
600V
Drain to Source Breakdown Voltage
600V
Input Capacitance
2.08nF
Drain to Source Resistance
144mOhm
Rds On Max
160 mΩ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPA60R160P6XKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2080pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 23.8A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 144mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPA60R160P6XKSA1 Features
a continuous drain current (ID) of 23.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 144mOhm
a 600V drain to source voltage (Vdss)

IPA60R160P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R160P6XKSA1 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IPA60R160P6XKSA1 More Descriptions

Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3FP
CoolMOS P6 Power Transistor N-Channel 600V 68A 3-Pin TO-220FP
Trans MOSFET N-CH 600V 23.8A 3-Pin(3 Tab) TO-220FP Tube
Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP TubeAvnet Japan
Mosfet, N-Ch, 600V, 23.8A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPA60R160P6XKSA1
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Product Comparison

The three parts on the right have similar specifications to IPA60R160P6XKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Channels

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Transistor Element Material

Number of Terminations

Terminal Position

Pin Count

Qualification Status

Number of Elements

Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

JEDEC-95 Code

View Compare
IPA60R160P6XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

PG-TO220-FP

6.000006g

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

34W Tc

12.5 ns

N-Channel

160mOhm @ 9A, 10V

4.5V @ 750μA

Halogen Free

2080pF @ 100V

23.8A Tc

44nC @ 10V

7.6ns

600V

10V

±20V

5.8 ns

40 ns

23.8A

20V

600V

600V

2.08nF

144mOhm

160 mΩ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPA60R280C6

Infineon Technologies

-

-

-

PG-TO220-3

-

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPA60R160P6XKSA1 vs IPA60R280C6
IPA60R099P6XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

34W Tc

20 ns

N-Channel

99m Ω @ 14.5A, 10V

4.5V @ 1.21mA

Halogen Free

3330pF @ 100V

37.9A Tc

70nC @ 10V

10ns

-

10V

±20V

5 ns

50 ns

37.9A

30V

600V

-

-

-

-

ROHS3 Compliant

Lead Free

e3

yes

EAR99

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

IPA60R160P6XKSA1 vs IPA60R099P6XKSA1
IPA60R199CPXKSA1

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-

-55°C~150°C TJ

Tube

CoolMOS™

2007

Not For New Designs

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

34W Tc

10 ns

N-Channel

199m Ω @ 9.9A, 10V

3.5V @ 1.1mA

Halogen Free

1520pF @ 100V

16A Tc

43nC @ 10V

5ns

650V

10V

±20V

-

50 ns

16A

20V

600V

-

-

-

-

ROHS3 Compliant

Lead Free

e3

yes

EAR99

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

SILICON

3

SINGLE

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

34W

ISOLATED

SWITCHING

TO-220AB

IPA60R160P6XKSA1 vs IPA60R199CPXKSA1

Certification

Related parts for IPA60R160P6XKSA1

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IPA60R520C6

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IPA60R125P6XKSA1

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MOSFET N-CH 600V 13.8A TO220-FP
IPA60R099P6XKSA1

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MOSFET N-CH 600V TO220FP-3
IPA60R199CPXKSA1

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MOSFET N-CH 650V 16A TO220-3
IPA60R520CPXKSA1

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IPA60R160P6XKSA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPA60R160P6XKSA1 DISTI #V99:2348_06377311	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	500	1 $3.4375 10 $2.673 100 $2.278 250 $2.115 500 $1.884
IPA60R160P6XKSA1 DISTI #IPA60R160P6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO220FP-3 RoHS: Compliant	0	1 $3.35 10 $3.01 25 $2.8456 100 $2.4661 500 $2.09936 2500 $1.68201 5000 $1.61878
IPA60R160P6XKSA1 DISTI #30214919	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	1001	10 $2.5542 100 $2.2176 250 $2.0988 500 $1.881
IPA60R160P6XKSA1 DISTI #31584662	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	500	4 $3.125 10 $2.673 100 $2.278 250 $2.115 500 $1.884
IPA60R160P6XKSA1 DISTI #SP001017082	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP RoHS: Compliant	1000	1 $1.89 10 $1.69 25 $1.49 50 $1.49 100 $1.39 500 $1.39 1000 $1.29
IPA60R160P6XKSA1 DISTI #IPA60R160P6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP RoHS: Compliant	0	500 $1.59 1000 $1.49 2000 $1.49 3000 $1.39 5000 $1.39
IPA60R160P6XKSA1 DISTI #IPA60R160P6	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP RoHS: Compliant	0	500 $1.91617 1000 $1.85435 1500 $1.79641 2500 $1.74197 5000 $1.71597 12500 $1.69074 25000 $1.66623
IPA60R160P6XKSA1 DISTI #12AC9691	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP, Transistor P	100	1 $3.44 10 $3.1 25 $2.93 50 $2.75 100 $2.59 250 $2.36 500 $2.15
IPA60R160P6 DISTI #726-IPA60R160P6	Infineon Technologies AG	MOSFET N-Ch 600V 10.4A TO220FP-3 RoHS: Compliant	1990	1 $3.04 10 $2.58 100 $2.24 250 $2.12 500 $1.9
IPA60R160P6XKSA1 DISTI #726-IPA60R160P6XKSA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.4A TO220FP-3 RoHS: Compliant	1500	1 $3.04 10 $2.58 100 $2.24 250 $2.12 500 $1.9
IPA60R160P6XKSA1 DISTI #IPA60R160P6XKSA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 600V, 28A, 34W	144	1 $3.37 3 $2.9 10 $2.34 100 $2.03
IPA60R160P6XKSA1 DISTI #2709946	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP RoHS: Compliant	933	1 $5.37 10 $4.8 100 $3.93
IPA60R160P6XKSA1 DISTI #2709946	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP	942	1 $3.3 10 $2.49 100 $2.16
IPA60R160P6XKSA1 DISTI #XSKDRABS0031500	Infineon Technologies AG	SOT-23 (Micro-3) RoHS: Compliant	800	350 $2.316 800 $2.172

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Infineon Technologies IPA60R160P6XKSA1

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