Infineon Technologies IPA60R099C7XKSA1
- Part Number:
- IPA60R099C7XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2488451-IPA60R099C7XKSA1
- Description:
- MOSFET N-CH 600V TO220-3
- ECAD Model:
-
- Datasheet:
- IPA60R099C7XKSA1
Infineon Technologies IPA60R099C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R099C7XKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ C7
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max33W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs99m Ω @ 9.7A, 10V
- Vgs(th) (Max) @ Id4V @ 490μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1819pF @ 400V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)12A
- JEDEC-95 CodeTO-220AB
- Max Dual Supply Voltage600V
- Drain-source On Resistance-Max0.099Ohm
- Pulsed Drain Current-Max (IDM)83A
- Avalanche Energy Rating (Eas)97 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R099C7XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 97 mJ.The maximum input capacitance of this device is 1819pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83A.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R099C7XKSA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 83A.
IPA60R099C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R099C7XKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 97 mJ.The maximum input capacitance of this device is 1819pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83A.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R099C7XKSA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 83A.
IPA60R099C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R099C7XKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPA60R099C7XKSA1 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.4pF 50volts C0G /-0.5pF
N-Ch 600V 12A 33W 0,099R TO220-Fullpak
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO220-3, RoHSInfineon SCT
MOS Power Transistors HV (>= 200V)
600VCOOLMOSC7POWERTRANSISTOR IPA"
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
N-Ch 600V 12A 33W 0,099R TO220-Fullpak
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO220-3, RoHSInfineon SCT
MOS Power Transistors HV (>= 200V)
600VCOOLMOSC7POWERTRANSISTOR IPA"
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
The three parts on the right have similar specifications to IPA60R099C7XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeMax Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeNumber of PinsECCN CodePin CountQualification StatusPower DissipationTurn On Delay TimeRise TimeDrain to Source Voltage (Vdss)Turn-Off Delay TimeGate to Source Voltage (Vgs)Supplier Device PackageSurface MountDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPA60R099C7XKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™ C72015e3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE33W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING99m Ω @ 9.7A, 10V4V @ 490μAHalogen Free1819pF @ 400V12A Tc42nC @ 10V10V±20V12ATO-220AB600V0.099Ohm83A97 mJROHS3 CompliantLead Free--------------- -
16 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 1.1mAHalogen Free1520pF @ 100V16A Tc43nC @ 10V10V±20V16ATO-220AB600V---ROHS3 CompliantLead Free3EAR993Not Qualified34W10 ns5ns650V50 ns20V----
-
--Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------30W Tc--N-Channel-520mOhm @ 3.8A, 10V3.5V @ 250μA-630pF @ 100V6.8A Tc31nC @ 10V10V±20V------ROHS3 Compliant--------600V--PG-TO220-FP---
-
12 Weeks-Through HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE33W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING299m Ω @ 6.6A, 10V3.5V @ 440μA-1100pF @ 100V11A Tc29nC @ 10V10V±20V-TO-220AB-0.299Ohm34A290 mJROHS3 Compliant---3Not Qualified---600V---NO11A600V
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