Infineon Technologies IPA60R099C6
- Part Number:
- IPA60R099C6
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848789-IPA60R099C6
- Description:
- MOSFET N-CH 600V 37.9A TO220-FP
- ECAD Model:
-
- Datasheet:
- IPA60R099C6
Infineon Technologies IPA60R099C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R099C6.
- Package / CasePG-TO220-3
- PackagingTube-packed
- RoHS StatusRoHS Compliant
IPA60R099C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA60R099C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA60R099C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA60R099C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA60R099C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IPA60R099C6.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeSurface MountTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeMountNumber of PinsTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageLead FreePower DissipationView Compare
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IPA60R099C6PG-TO220-3Tube-packedRoHS Compliant-------------------------------------------------------- -
TO-220-3 Full PackTubeRoHS CompliantThrough HoleNOSILICON-55°C~150°C TJCoolMOS™2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE28W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING600m Ω @ 3.3A, 10V3.5V @ 220μA550pF @ 100V6.1A Tc27nC @ 10V600V10V±20VTO-220AB6.1A0.6Ohm15A600V144 mJ-------------
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TO-220-3 Full PackTubeROHS3 CompliantThrough Hole-SILICON-55°C~150°C TJCoolMOS™ C72005e3-Active1 (Unlimited)3-Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED---1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING65m Ω @ 17.1A, 10V4V @ 850μA3020pF @ 400V15A Tc64nC @ 10V-10V±20VTO-220AB19A0.065Ohm145A-171 mJ18 WeeksThrough Hole317 nsHalogen Free14ns7 ns72 ns15A20V650VLead Free-
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TO-220-3 Full PackTubeROHS3 CompliantThrough Hole-SILICON-55°C~150°C TJCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED3-Not Qualified1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 1.1mA1520pF @ 100V16A Tc43nC @ 10V650V10V±20VTO-220AB-----16 WeeksThrough Hole310 nsHalogen Free5ns-50 ns16A20V600VLead Free34W
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