Infineon Technologies IPA50R650CE

IPA50R650CE Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 102 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 342pF @ 100V maximal input capacitance.A device can conduct a maximum continuous current of [6.1A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 19A.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (13V).

IPA50R650CE Features
the avalanche energy rating (Eas) is 102 mJ
based on its rated peak drain current 19A.
a 500V drain to source voltage (Vdss)


IPA50R650CE Applications
There are a lot of Infineon Technologies
IPA50R650CE applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies