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IPA50R190CE

Infineon Technologies IPA50R190CE

Part Number:
IPA50R190CE
Manufacturer:
Infineon Technologies
Ventron No:
2854178-IPA50R190CE
Description:
MOSFET N-CH 500V 18.5A TO220FP
ECAD Model:
Datasheet:
IPA50R190CE

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Specifications
Infineon Technologies IPA50R190CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA50R190CE.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2008
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    32W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    190m Ω @ 6.2A, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 510μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1137pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    18.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47.2nC @ 10V
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    13V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.19Ohm
  • Pulsed Drain Current-Max (IDM)
    63A
  • DS Breakdown Voltage-Min
    500V
  • Avalanche Energy Rating (Eas)
    339 mJ
  • FET Feature
    Super Junction
  • RoHS Status
    RoHS Compliant
Description
IPA50R190CE Description
IPA50R190CE is a type of CoolMOS? CE power transistor provided by Infineon Technologies based on the super-junction(SJ) principle and pioneered by Infineon Technologies. It is specifically designed to meet the highest efficiency standards for cost-sensitive applications in Consumer and Lighting markets. It provides all benefits of a fast switching Superjunction MOSFET while featuring ease of use and offering the best cost-down performance ratio available on the market.

IPA50R190CE Features
Easy to use/drive
Extremely low losses
Revolutionary CoolMOS? technology
Available in the PG-TO 220/PG-TO247 package
Very high commutation ruggedness

IPA50R190CE Applications
PC Silverbox
LCD & PDP TV
Lighting
Product Comparison
The three parts on the right have similar specifications to IPA50R190CE.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Feature
    RoHS Status
    Case Connection
    Drain Current-Max (Abs) (ID)
    Factory Lead Time
    Mount
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Turn On Delay Time
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Lead Free
    ECCN Code
    View Compare
  • IPA50R190CE
    IPA50R190CE
    Infineon Technologies
    Through Hole
    TO-220-3 Full Pack
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    yes
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    32W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    190m Ω @ 6.2A, 13V
    3.5V @ 510μA
    1137pF @ 100V
    18.5A Tc
    47.2nC @ 10V
    500V
    13V
    ±20V
    TO-220AB
    0.19Ohm
    63A
    500V
    339 mJ
    Super Junction
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA50R650CE
    IPA50R650CE
    Infineon Technologies
    Through Hole
    TO-220-3 Full Pack
    NO
    SILICON
    -40°C~150°C TJ
    Tube
    CoolMOS™
    2013
    yes
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    27.2W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    650m Ω @ 1.8A, 13V
    3.5V @ 150μA
    342pF @ 100V
    6.1A Tc
    15nC @ 10V
    500V
    13V
    ±20V
    TO-220AB
    0.65Ohm
    19A
    500V
    102 mJ
    Super Junction
    RoHS Compliant
    ISOLATED
    6.1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPA50R190CE vs IPA50R650CE
  • IPA50R280CEXKSA2
    IPA50R280CEXKSA2
    Infineon Technologies
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -40°C~150°C TJ
    Tube
    CoolMOS™ CE
    2008
    yes
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    30.4W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    280m Ω @ 4.2A, 13V
    3.5V @ 350μA
    773pF @ 100V
    7.5A Tc
    32.6nC @ 10V
    -
    13V
    ±20V
    TO-220AB
    0.28Ohm
    42.9A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    18 Weeks
    Through Hole
    3
    e3
    Tin (Sn)
    8 ns
    Halogen Free
    6.4ns
    7.6 ns
    40 ns
    7.5A
    20V
    500V
    Lead Free
    -
    IPA50R190CE vs IPA50R280CEXKSA2
  • IPA50R380CEXKSA2
    IPA50R380CEXKSA2
    Infineon Technologies
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -40°C~150°C TJ
    Tube
    CoolMOS™ CE
    2008
    yes
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    29.2W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    380m Ω @ 3.2A, 13V
    3.5V @ 260μA
    584pF @ 100V
    6.3A Tc
    24.8nC @ 10V
    -
    13V
    ±20V
    TO-220AB
    -
    -
    -
    210 mJ
    -
    ROHS3 Compliant
    ISOLATED
    -
    18 Weeks
    Through Hole
    3
    e3
    Tin (Sn)
    11 ns
    Halogen Free
    9ns
    8 ns
    56 ns
    6.3A
    20V
    500V
    Lead Free
    EAR99
    IPA50R190CE vs IPA50R380CEXKSA2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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