Infineon Technologies IPA50R950CE
- Part Number:
- IPA50R950CE
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493624-IPA50R950CE
- Description:
- MOSFET N-CH 500V 4.3A PG-TO220FP
- ECAD Model:
-
- Datasheet:
- IPA50R950CE
Infineon Technologies IPA50R950CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA50R950CE.
- Factory Lead Time6 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max25.7W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs950m Ω @ 1.2A, 13V
- Vgs(th) (Max) @ Id3.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds231pF @ 100V
- Current - Continuous Drain (Id) @ 25°C4.3A Tc
- Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)13V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain-source On Resistance-Max0.95Ohm
- Pulsed Drain Current-Max (IDM)12.8A
- DS Breakdown Voltage-Min500V
- Avalanche Energy Rating (Eas)68 mJ
- FET FeatureSuper Junction
- RoHS StatusRoHS Compliant
IPA50R950CE Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneered by Infineon Technologies. CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsin Consumer and Lighting markets by still meeting highest
efficiency standards.The new series provides all benefits ofafast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
IPA50R950CE Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
IPA50R950CE Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications
IPA50R950CE Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
IPA50R950CE Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications
The three parts on the right have similar specifications to IPA50R950CE.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET FeatureRoHS StatusMountNumber of PinsJESD-609 CodeTerminal FinishTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageLead FreeQualification StatusSupplier Device PackageView Compare
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IPA50R950CE6 WeeksThrough HoleTO-220-3 Full PackNOSILICON-40°C~150°C TJTubeCoolMOS™2008yesObsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T31SINGLE WITH BUILT-IN DIODE25.7W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING950m Ω @ 1.2A, 13V3.5V @ 100μA231pF @ 100V4.3A Tc10.5nC @ 10V500V13V±20VTO-220AB0.95Ohm12.8A500V68 mJSuper JunctionRoHS Compliant---------------- -
18 WeeksThrough HoleTO-220-3 Full Pack-SILICON-40°C~150°C TJTubeCoolMOS™ CE2008yesActive1 (Unlimited)3-MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED--1SINGLE WITH BUILT-IN DIODE30.4W TcENHANCEMENT MODE-N-ChannelSWITCHING280m Ω @ 4.2A, 13V3.5V @ 350μA773pF @ 100V7.5A Tc32.6nC @ 10V-13V±20VTO-220AB0.28Ohm42.9A---ROHS3 CompliantThrough Hole3e3Tin (Sn)8 nsHalogen Free6.4ns7.6 ns40 ns7.5A20V500VLead Free--
-
-Through HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeCoolMOS™2008yesObsolete1 (Unlimited)3-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T31SINGLE WITH BUILT-IN DIODE29.2W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING380m Ω @ 3.2A, 13V3.5V @ 260μA584pF @ 100V9.9A Tc24.8nC @ 10V500V13V±20VTO-220AB0.38Ohm30A500V210 mJSuper JunctionRoHS Compliant-------------Not Qualified-
-
-Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------104W Tc--N-Channel-299mOhm @ 6.6A, 10V3.5V @ 440μA1.19pF @ 100V12A Tc31nC @ 10V550V10V±20V------ROHS3 Compliant--------------PG-TO220-FP
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