FDN339AN

Fairchild/ON Semiconductor FDN339AN

Part Number:
FDN339AN
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478070-FDN339AN
Description:
MOSFET N-CH 20V 3A SSOT3
ECAD Model:
Datasheet:
FDN339AN

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Specifications
Fairchild/ON Semiconductor FDN339AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN339AN.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    35mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    3A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 3A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 4.5V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    3A
  • Threshold Voltage
    850mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain to Source Breakdown Voltage
    20V
  • Dual Supply Voltage
    20V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    850 mV
  • Height
    1.22mm
  • Length
    2.92mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDN339AN Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.     FDN339AN Features 3 A, 20 V. RDS(ON) = 0.035 ? @ VGS = 4.5 V RDS(ON) = 0.050 ? @ VGS = 2.5 V. Low gate charge (7nC typical). High-performance trench technology for extremely low RDS(ON). High power and current handling capability.     FDN339AN Applications DC/DC converter Load switch  
FDN339AN More Descriptions
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ
Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
MOSFET, N, SMD, SUPERSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 8 / Fall Time ns = 5 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Product Comparison
The three parts on the right have similar specifications to FDN339AN.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain to Source Voltage (Vdss)
    Contact Plating
    Additional Feature
    View Compare
  • FDN339AN
    FDN339AN
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    1999
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    35mOhm
    Tin (Sn)
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3A
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    8 ns
    N-Channel
    SWITCHING
    35m Ω @ 3A, 4.5V
    1.5V @ 250μA
    700pF @ 10V
    3A Ta
    10nC @ 4.5V
    10ns
    2.5V 4.5V
    ±8V
    10 ns
    18 ns
    3A
    850mV
    8V
    3A
    20V
    20V
    150°C
    850 mV
    1.22mm
    2.92mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDN308P
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    125MOhm
    Tin (Sn)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.5A
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    8 ns
    P-Channel
    SWITCHING
    125m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    341pF @ 10V
    1.5A Ta
    5.4nC @ 4.5V
    10ns
    2.5V 4.5V
    ±12V
    10 ns
    12 ns
    -1.5A
    -1V
    12V
    -
    -20V
    -
    -
    -1 V
    940μm
    2.92mm
    1.4mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    20V
    -
    -
  • FDN336P
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    200mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.3A
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    7 ns
    P-Channel
    SWITCHING
    200m Ω @ 1.3A, 4.5V
    1.5V @ 250μA
    330pF @ 10V
    1.3A Ta
    5nC @ 4.5V
    12ns
    2.5V 4.5V
    ±8V
    12 ns
    16 ns
    1.2A
    -900mV
    8V
    -
    -20V
    -20V
    -
    -900 mV
    940μm
    2.92mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    20V
    Tin
    -
  • FDN338P
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    115mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.6A
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    P-Channel
    SWITCHING
    115m Ω @ 1.6A, 4.5V
    1.5V @ 250μA
    451pF @ 10V
    1.6A Ta
    6.2nC @ 4.5V
    11ns
    2.5V 4.5V
    ±8V
    11 ns
    16 ns
    1.6A
    -800mV
    8V
    -
    -20V
    -
    150°C
    -800 mV
    1.22mm
    -
    3.05mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    20V
    Tin
    LOGIC LEVEL COMPATIBLE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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