Fairchild/ON Semiconductor FDN339AN
- Part Number:
- FDN339AN
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478070-FDN339AN
- Description:
- MOSFET N-CH 20V 3A SSOT3
- Datasheet:
- FDN339AN
Fairchild/ON Semiconductor FDN339AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN339AN.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance35mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating3A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 3A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3A Ta
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)3A
- Threshold Voltage850mV
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)3A
- Drain to Source Breakdown Voltage20V
- Dual Supply Voltage20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs850 mV
- Height1.22mm
- Length2.92mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDN339AN Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDN339AN Features
3 A, 20 V. RDS(ON) = 0.035 ? @ VGS = 4.5 V
RDS(ON) = 0.050 ? @ VGS = 2.5 V.
Low gate charge (7nC typical).
High-performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
FDN339AN Applications
DC/DC converter
Load switch
FDN339AN More Descriptions
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ
Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
MOSFET, N, SMD, SUPERSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 8 / Fall Time ns = 5 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
MOSFET, N, SMD, SUPERSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 8 / Fall Time ns = 5 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
The three parts on the right have similar specifications to FDN339AN.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain to Source Voltage (Vdss)Contact PlatingAdditional FeatureView Compare
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FDN339ANACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®1999e3yesActive1 (Unlimited)3SMD/SMTEAR9935mOhmTin (Sn)FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING3A11500mW TaSingleENHANCEMENT MODE500mW8 nsN-ChannelSWITCHING35m Ω @ 3A, 4.5V1.5V @ 250μA700pF @ 10V3A Ta10nC @ 4.5V10ns2.5V 4.5V±8V10 ns18 ns3A850mV8V3A20V20V150°C850 mV1.22mm2.92mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
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ACTIVE (Last Updated: 5 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)3-EAR99125MOhmTin (Sn)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-1.5A1-500mW TaSingleENHANCEMENT MODE500mW8 nsP-ChannelSWITCHING125m Ω @ 1.5A, 4.5V1.5V @ 250μA341pF @ 10V1.5A Ta5.4nC @ 4.5V10ns2.5V 4.5V±12V10 ns12 ns-1.5A-1V12V--20V---1 V940μm2.92mm1.4mmNo SVHC-ROHS3 CompliantLead FreeNOT SPECIFIEDNOT SPECIFIEDNot Qualified20V--
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ACTIVE (Last Updated: 5 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2005e3yesActive1 (Unlimited)3SMD/SMTEAR99200mOhm-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-1.3A1-500mW TaSingleENHANCEMENT MODE500mW7 nsP-ChannelSWITCHING200m Ω @ 1.3A, 4.5V1.5V @ 250μA330pF @ 10V1.3A Ta5nC @ 4.5V12ns2.5V 4.5V±8V12 ns16 ns1.2A-900mV8V--20V-20V--900 mV940μm2.92mm1.4mmNo SVHCNoROHS3 CompliantLead Free---20VTin-
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ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)3-EAR99115mOhm-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-1.6A11500mW TaSingleENHANCEMENT MODE500mW10 nsP-ChannelSWITCHING115m Ω @ 1.6A, 4.5V1.5V @ 250μA451pF @ 10V1.6A Ta6.2nC @ 4.5V11ns2.5V 4.5V±8V11 ns16 ns1.6A-800mV8V--20V-150°C-800 mV1.22mm-3.05mmNo SVHCNoROHS3 CompliantLead Free---20VTinLOGIC LEVEL COMPATIBLE
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