Fairchild/ON Semiconductor FDN306P
- Part Number:
- FDN306P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478010-FDN306P
- Description:
- MOSFET P-CH 12V 2.6A SSOT3
- Datasheet:
- FDN306P
Fairchild/ON Semiconductor FDN306P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN306P.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSuperSOT-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Resistance40MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-12V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-2.6A
- Number of Elements1
- Voltage12V
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Current26A
- Power Dissipation500mW
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs40mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1138pF @ 6V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
- Rise Time10ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)-2.6A
- Threshold Voltage-600mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-12V
- Dual Supply Voltage-12V
- Input Capacitance1.138nF
- Drain to Source Resistance40mOhm
- Rds On Max40 mΩ
- Nominal Vgs-600 mV
- Height940μm
- Length2.92mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDN306P Description
Fairchild's innovative low voltage PowerTrench technology is used in this FDN306P P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind.
FDN306P Features
?Quick switching time ?Extremely low RDs with high-performance trench technology (ON) ?In the same footprint, supersOTTM -3 has a lower RDs(ON) and a 30% higher power handling capability than sOT23.
FDN306P Applications
Battery administration Switch to load Battery security
Fairchild's innovative low voltage PowerTrench technology is used in this FDN306P P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind.
FDN306P Features
?Quick switching time ?Extremely low RDs with high-performance trench technology (ON) ?In the same footprint, supersOTTM -3 has a lower RDs(ON) and a 30% higher power handling capability than sOT23.
FDN306P Applications
Battery administration Switch to load Battery security
FDN306P More Descriptions
P-Channel PowerTrench® MOSFET, 1.8V Specified, -12V, -2.6A, 40mΩ
FDN306P Fairchild Trans MOSFET P-CH 12V 2.6A 3-PinSOT-23 T/R RoHS
Trans MOSFET P Channel 12 Volt 2.6A 3-Pin SuperSOT Tape and Reel
P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P CH, -12V, -2.6A, SUPERSOT; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 500mW; Transistor Case Style: SuperSOT; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
FDN306P Fairchild Trans MOSFET P-CH 12V 2.6A 3-PinSOT-23 T/R RoHS
Trans MOSFET P Channel 12 Volt 2.6A 3-Pin SuperSOT Tape and Reel
P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P CH, -12V, -2.6A, SUPERSOT; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 500mW; Transistor Case Style: SuperSOT; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to FDN306P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionTerminal FormNumber of ChannelsOperating ModeTransistor ApplicationMax Junction Temperature (Tj)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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FDN306PACTIVE (Last Updated: 5 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SuperSOT-3-55°C~150°C TJTape & Reel (TR)PowerTrench®2001Active1 (Unlimited)SMD/SMT40MOhm150°C-55°C-12VMOSFET (Metal Oxide)-2.6A112V500mW TaSingle26A500mW11 nsP-Channel40mOhm @ 2.6A, 4.5V1.5V @ 250μA1138pF @ 6V2.6A Ta17nC @ 4.5V10ns12V1.8V 4.5V±8V10 ns38 ns-2.6A-600mV8V-12V-12V1.138nF40mOhm40 mΩ-600 mV940μm2.92mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------
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ACTIVE (Last Updated: 6 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)PowerTrench®2001Active1 (Unlimited)-115mOhm---20VMOSFET (Metal Oxide)-1.6A1-500mW TaSingle-500mW10 nsP-Channel115m Ω @ 1.6A, 4.5V1.5V @ 250μA451pF @ 10V1.6A Ta6.2nC @ 4.5V11ns20V2.5V 4.5V±8V11 ns16 ns1.6A-800mV8V-20V-----800 mV1.22mm-3.05mmNo SVHCNoROHS3 CompliantLead Free30mgSILICONe3yes3EAR99LOGIC LEVEL COMPATIBLEOther TransistorsDUALGULL WING1ENHANCEMENT MODESWITCHING150°C---
-
-12 Weeks----3--Digi-Reel®-2008----150°C-55°C------------------------------------RoHS Compliant------------------
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ACTIVE (Last Updated: 7 hours ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)PowerTrench®2017Active1 (Unlimited)-----MOSFET (Metal Oxide)-1-500mW TaSingle-500mW3 nsN-Channel110m Ω @ 1.4A, 10V3V @ 250μA193pF @ 15V1.4A Ta1.8nC @ 4.5V8ns-4.5V 10V±20V8 ns16 ns1.4A2.1V20V30V-----940μm1.4mm2.92mmNo SVHC-ROHS3 CompliantLead Free30mgSILICONe3yes3EAR99FAST SWITCHINGFET General Purpose PowerDUALGULL WING-ENHANCEMENT MODESWITCHING-NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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