Fairchild/ON Semiconductor FDN302P

Name: FDN302P
Brand: Fairchild/ON Semiconductor
SKU: 2478012-FDN302P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDN302P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478012-FDN302P

Description:: MOSFET P-CH 20V 2.4A SSOT3

ECAD Model:

Datasheet:: FDN302P

Specifications

Fairchild/ON Semiconductor FDN302P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN302P.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
55mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-2.4A
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
13 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
882pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.4A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
-2.4A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Nominal Vgs
-1 V
Min Breakdown Voltage
20V
Height
940μm
Length
2.92mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDN302P Description

The FDN302P is a -20V P-channel 2.5V Specified PowerTrench? MOSFET that has been specially designed to reduce on-state resistance while maintaining low gate charge for superior switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode, resulting in quick switching for synchronous rectification in AC/DC power supply. It makes use of a shielded-gate construction to provide charge balance. Using this sophisticated technology, the FOM (figure of merit (QGxRDS(ON)) of these devices is 66% lower than the previous version. Because it may avoid undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage rating - MOSFET require circuits. This product is intended for general use and can be used in a variety of applications.
FDN302P Features

–20 A, –2.4 V.
RDS(ON)= 0.055Ω @ VGS = –4.5 V
RDS(ON) = 0.080Ω @ VGS = –2.5 V
SuperSOT? -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint
Fast switching speed
High performance trench technology for extremely low RDS(ON)
FDN302P Applications

Power Management
Load Switch
Battery Protection
Mobile phones
PC & notebooks
Portable electronics

FDN302P More Descriptions

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.4A, 55mΩ
Transistor MOSFET P-Channel 20 Volt 2.4A 3-Pin SuperSOT
P-Channel 20 V 55 mOhm 2.5V Surface Mount Specified PowerTrench Mosfet SSOT-3
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Product Comparison

The three parts on the right have similar specifications to FDN302P.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Min Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Max Operating Temperature

Min Operating Temperature

View Compare
FDN302P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

10 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2000

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

55mOhm

Tin (Sn)

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-2.4A

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

13 ns

P-Channel

SWITCHING

55m Ω @ 2.4A, 4.5V

1.5V @ 250μA

882pF @ 10V

2.4A Ta

14nC @ 4.5V

11ns

2.5V 4.5V

±12V

11 ns

25 ns

-2.4A

-1V

12V

-20V

-20V

-1 V

20V

940μm

2.92mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
FDN336P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

10 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2005

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

200mOhm

-

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-1.3A

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

7 ns

P-Channel

SWITCHING

200m Ω @ 1.3A, 4.5V

1.5V @ 250μA

330pF @ 10V

1.3A Ta

5nC @ 4.5V

12ns

2.5V 4.5V

±8V

12 ns

16 ns

1.2A

-900mV

8V

-20V

-20V

-900 mV

-

940μm

2.92mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

20V

-

-

-

FDN302P vs FDN336P
FDN337N

Fairchild/ON Semiconductor

-

-

-

-

SOT-23

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

80mΩ @ 3.6A,4.5V

1.3V @ 250uA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

20V

3A

-

-

FDN302P vs FDN337N
FDN359BN_F095

Fairchild/ON Semiconductor

-

12 Weeks

-

-

-

3

-

-

-

Digi-Reel®

-

2008

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

150°C

-55°C

FDN302P vs FDN359BN_F095