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FDG328P

Fairchild/ON Semiconductor FDG328P

Part Number:
FDG328P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2480701-FDG328P
Description:
MOSFET P-CH 20V 1.5A SC70-6
ECAD Model:
Datasheet:
FDG328P

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Specifications
Fairchild/ON Semiconductor FDG328P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG328P.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    28mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    145MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -1.5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    750mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    750mW
  • Turn On Delay Time
    9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    145m Ω @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    337pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 4.5V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    10 ns
  • Continuous Drain Current (ID)
    -1.5A
  • Threshold Voltage
    -600mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    2mm
  • Width
    1.25mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDG328P Description The FDG328P is a 2.5V P-Channel MOSFET manufactured using a rugged gate version of the sophisticated PowerTrench technology. It was designed with a wide variety of gate drive voltages (2.5V – 12V) in mind for power management applications.
FDG328P Features -1.5 A, -20 V
RDS(ON) = 0.145Ω @ VGS = -4.5 V
RDS(ON) = 0.210Ω @ VGS = -2.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
Compact industry standard SC70-6 surface mount package
FDG328P Applications Load Switch
Power Management
DC/DC Converter
FDG328P More Descriptions
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -1.5 A, 145 mΩ
Trans MOSFET P-CH 20V 1.5A 6-Pin SC-88 T/R / MOSFET P-CH 20V 1.5A SC70-6
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-1.5A; On Resistance, Rds(on):156mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.6V ;RoHS Compliant: Yes
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).
Product Comparison
The three parts on the right have similar specifications to FDG328P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    Published
    REACH SVHC
    View Compare
  • FDG328P
    FDG328P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    145MOhm
    Tin (Sn)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.5A
    1
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    9 ns
    P-Channel
    SWITCHING
    145m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    337pF @ 10V
    1.5A Ta
    6nC @ 4.5V
    12ns
    20V
    2.5V 4.5V
    ±12V
    12 ns
    10 ns
    -1.5A
    -600mV
    12V
    -20V
    150°C
    1.1mm
    2mm
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG329N
    FDG329N
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    420mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    90m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    324pF @ 10V
    1.5A Ta
    4.6nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    unknown
    NOT SPECIFIED
    6
    R-PDSO-G6
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    1.5A
    0.09Ohm
    20V
    -
    -
    -
    FDG328P vs FDG329N
  • FDG314P
    FDG314P
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    750mW Ta
    -
    -
    -
    -
    P-Channel
    -
    1.1Ohm @ 500mA, 4.5V
    1.5V @ 250μA
    63pF @ 10V
    650mA Ta
    1.5nC @ 4.5V
    -
    25V
    2.7V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SC-88 (SC-70-6)
    -
    -
    FDG328P vs FDG314P
  • FDG313N
    FDG313N
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    25V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    950mA
    1
    -
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    3 ns
    N-Channel
    SWITCHING
    450m Ω @ 500mA, 4.5V
    1.5V @ 250μA
    50pF @ 10V
    950mA Ta
    2.3nC @ 4.5V
    8.5ns
    -
    2.7V 4.5V
    ±8V
    8.5 ns
    17 ns
    950mA
    800mV
    8V
    25V
    -
    1mm
    2mm
    1.25mm
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    0.95A
    -
    -
    -
    2000
    No SVHC
    FDG328P vs FDG313N
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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