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FDG315N

Fairchild/ON Semiconductor FDG315N

Part Number:
FDG315N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2480637-FDG315N
Description:
MOSFET N-CH 30V 2A SC70-6
ECAD Model:
Datasheet:
FDG315N

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Specifications
Fairchild/ON Semiconductor FDG315N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG315N.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    28mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    120MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    2A
  • Number of Elements
    1
  • Power Dissipation-Max
    750mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    750mW
  • Turn On Delay Time
    3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    120m Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 5V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    7 ns
  • Continuous Drain Current (ID)
    2A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    1.8 V
  • Height
    1mm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDG315N Description Using a PowerTrench process, the FDG315N N-Channel logic level MOSFET is produced to minimize on-state resistance while maintaining superior switching performance. An FDG315N is ideally suited for battery-powered and low voltage applications with low in-line power loss.
FDG315N Features 2 A, 30 A V
Low gate charge (2.1nC typical).
RDS(on) = 0.12 Ω @ VGS = 10 V
RDS(on) = 0.16 Ω @ VGS = 4.5 V
High-performance trench technology for extremely lowRDS(ON).
Compact industry standard SC70-6 surface mount package.
FDG315N Applications load switch
dc/dc converter
power management
FDG315N More Descriptions
Logic Level PowerTrench® MOSFET, N-Channel, 30 V, 2 A, 120 mΩ
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(On):0.12Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:- Rohs Compliant: Yes
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
N CHANNEL MOSFET, 30V, 2A, SC-70; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Device Marking:.15; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Product Comparison
The three parts on the right have similar specifications to FDG315N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDG315N
    FDG315N
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2000
    e3
    yes
    Active
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    120MOhm
    Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    2A
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    3 ns
    N-Channel
    SWITCHING
    120m Ω @ 2A, 10V
    3V @ 250μA
    220pF @ 15V
    2A Ta
    4nC @ 5V
    11ns
    4.5V 10V
    ±20V
    11 ns
    7 ns
    2A
    1.8V
    20V
    2A
    30V
    30V
    1.8 V
    1mm
    2mm
    1.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG326P
    FDG326P
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    750mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    140m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    467pF @ 10V
    1.5A Ta
    7nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    1.5A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    unknown
    NOT SPECIFIED
    6
    R-PDSO-G6
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    0.14Ohm
    20V
    -
    -
    FDG315N vs FDG326P
  • FDG313N
    FDG313N
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2000
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    25V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    950mA
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    3 ns
    N-Channel
    SWITCHING
    450m Ω @ 500mA, 4.5V
    1.5V @ 250μA
    50pF @ 10V
    950mA Ta
    2.3nC @ 4.5V
    8.5ns
    2.7V 4.5V
    ±8V
    8.5 ns
    17 ns
    950mA
    800mV
    8V
    0.95A
    25V
    -
    -
    1mm
    2mm
    1.25mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDG315N vs FDG313N
  • FDG328P
    FDG328P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    6
    -
    EAR99
    145MOhm
    Tin (Sn)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.5A
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    9 ns
    P-Channel
    SWITCHING
    145m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    337pF @ 10V
    1.5A Ta
    6nC @ 4.5V
    12ns
    2.5V 4.5V
    ±12V
    12 ns
    10 ns
    -1.5A
    -600mV
    12V
    -
    -20V
    -
    -
    1.1mm
    2mm
    1.25mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    20V
    -
    -
    1
    150°C
    FDG315N vs FDG328P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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