Fairchild/ON Semiconductor FDG311N

Name: FDG311N
Brand: Fairchild/ON Semiconductor
SKU: 3554142-FDG311N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDG311N

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3554142-FDG311N

Description:: MOSFET N-CH 20V 1.9A SC70-6

ECAD Model:

Datasheet:: FDG311N

Specifications

Fairchild/ON Semiconductor FDG311N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG311N.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.9A
Number of Elements
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
115m Ω @ 1.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.9A Ta
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 4.5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
1.9A
Threshold Voltage
900mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Nominal Vgs
900 mV
Height
1mm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDG311N Description
FDG311N is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. This N-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

FDG311N Features
1.9 A, 20 V
RDS(ON) = 0.115 Ω @ VGS = 4.5 V
RDS(ON) = 0.150 Ω @ VGS = 2.5 V
Low gate charge (3nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mountpackage.

FDG311N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDG311N More Descriptions

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
Modular Connectors - Jacks With Magnetics 1 (Unlimited) RJ45 1 Solder 90° Angle (Right) Shielded, EMI Finger Through Hole Down 10/100/1000 Base-T, AutoMDIX CONN MAGJACK 1PORT 1000 BASE-T
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Product Comparison

The three parts on the right have similar specifications to FDG311N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Termination

Resistance

Dual Supply Voltage

View Compare
FDG311N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2000

e3

yes

Active

1 (Unlimited)

6

EAR99

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

1.9A

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

5 ns

N-Channel

SWITCHING

115m Ω @ 1.9A, 4.5V

1.5V @ 250μA

270pF @ 10V

1.9A Ta

4.5nC @ 4.5V

9ns

2.5V 4.5V

±8V

9 ns

10 ns

1.9A

900mV

8V

20V

900 mV

1mm

2mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDG329N

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

6

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

420mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

90m Ω @ 1.5A, 4.5V

1.5V @ 250μA

324pF @ 10V

1.5A Ta

4.6nC @ 4.5V

-

2.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

MATTE TIN

260

unknown

NOT SPECIFIED

6

R-PDSO-G6

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

20V

1.5A

0.09Ohm

20V

-

-

-

-

FDG311N vs FDG329N
FDG314P

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

750mW Ta

-

-

-

-

P-Channel

-

1.1Ohm @ 500mA, 4.5V

1.5V @ 250μA

63pF @ 10V

650mA Ta

1.5nC @ 4.5V

-

2.7V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

25V

-

-

-

SC-88 (SC-70-6)

-

-

-

FDG311N vs FDG314P
FDG315N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

-

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2000

e3

yes

Active

1 (Unlimited)

6

EAR99

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

2A

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

3 ns

N-Channel

SWITCHING

120m Ω @ 2A, 10V

3V @ 250μA

220pF @ 15V

2A Ta

4nC @ 5V

11ns

4.5V 10V

±20V

11 ns

7 ns

2A

1.8V

20V

30V

1.8 V

1mm

2mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Tin (Sn)

-

-

-

-

-

-

-

-

2A

-

-

-

SMD/SMT

120MOhm

30V

FDG311N vs FDG315N