Fairchild/ON Semiconductor FDG316P
- Part Number:
- FDG316P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585920-FDG316P
- Description:
- MOSFET P-CH 30V 1.6A SC70-6
- Datasheet:
- FDG316P
Fairchild/ON Semiconductor FDG316P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG316P.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight28mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance190MOhm
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.6A
- Number of Elements1
- Power Dissipation-Max750mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation750mW
- Turn On Delay Time8 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs190m Ω @ 1.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds165pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)1.6A
- Threshold Voltage-1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Height1mm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDG316P Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDG316P Features -1.6 A, -30 V. RDS(ON) = 0.19 ? @ VGS = -10 V RDS(ON) = 0.30 ? @ VGS = -4.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
FDG316P Applications DC/DC converter Load switch Power Management
FDG316P Features -1.6 A, -30 V. RDS(ON) = 0.19 ? @ VGS = -10 V RDS(ON) = 0.30 ? @ VGS = -4.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
FDG316P Applications DC/DC converter Load switch Power Management
FDG316P More Descriptions
Logic Level PowerTrench® MOSFET, P-Channel, -30 V, -1.6 A, 190 mΩ
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
P CHANNEL MOSFET, -30V, 1.6A, SC-70; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.6A; Device Marking:.36; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
P CHANNEL MOSFET, -30V, 1.6A, SC-70; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.6A; Device Marking:.36; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
The three parts on the right have similar specifications to FDG316P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackageNominal VgsMin Breakdown VoltageView Compare
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FDG316PACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2000e3yesActive1 (Unlimited)6EAR99190MOhmOther Transistors30VMOSFET (Metal Oxide)DUALGULL WING1.6A1750mW TaSingleENHANCEMENT MODE750mW8 nsP-ChannelSWITCHING190m Ω @ 1.6A, 10V3V @ 250μA165pF @ 15V1.6A Ta5nC @ 10V9ns4.5V 10V±20V9 ns14 ns1.6A-1.6V20V-30V1mm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free-----------------
-
----Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)6----MOSFET (Metal Oxide)DUALGULL WING-1420mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING90m Ω @ 1.5A, 4.5V1.5V @ 250μA324pF @ 10V1.5A Ta4.6nC @ 4.5V-2.5V 4.5V±12V-----------ROHS3 Compliant-YESMATTE TIN260unknownNOT SPECIFIED6R-PDSO-G6COMMERCIALSINGLE WITH BUILT-IN DIODE20V1.5A0.09Ohm20V---
-
----Surface Mount6-TSSOP, SC-88, SOT-363----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----750mW Ta----P-Channel-1.1Ohm @ 500mA, 4.5V1.5V @ 250μA63pF @ 10V650mA Ta1.5nC @ 4.5V-2.7V 4.5V±8V-----------ROHS3 Compliant----------25V---SC-88 (SC-70-6)--
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9990mOhmFET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING1.5A1420mW TaSingleENHANCEMENT MODE420mW6 nsN-ChannelSWITCHING90m Ω @ 1.5A, 4.5V1.5V @ 250μA423pF @ 10V1.5A Ta6.3nC @ 4.5V6.5ns1.8V 4.5V±8V6.5 ns14 ns1.5A700mV8V20V1mm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free--260-30---------700 mV20V
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