Fairchild/ON Semiconductor FDC634P
- Part Number:
- FDC634P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479753-FDC634P
- Description:
- MOSFET P-CH 20V 3.5A SSOT-6
- Datasheet:
- FDC634P
Fairchild/ON Semiconductor FDC634P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC634P.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance80MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-3.5A
- Number of Elements1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs80m Ω @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds779pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.5A Ta
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Rise Time9ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)-3.5A
- Threshold Voltage-800mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage-20V
- Nominal Vgs-800 mV
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC634P Description
FDC634P MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDC634P datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDC634P is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDC634P Features
High performance trench technology
RDS(ON) = 80 m|? @ VGS = -4.5 V
Low gate charge
RDS(ON) = 110 m|? @ VGS = -2.5 V
3.5 A, -20 V
FDC634P Applications
Power factor correction
Electronic lamp ballasts
Flat panel display
TV power
ATX
FDC634P More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ
Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT
P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402
MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V
Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT
P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402
MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V
The three parts on the right have similar specifications to FDC634P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageContact PlatingNumber of ChannelsDrain Current-Max (Abs) (ID)Max Junction Temperature (Tj)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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FDC634PACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)6SMD/SMTEAR9980MOhmTin (Sn)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-3.5A11.6W TaSingleENHANCEMENT MODE1.6W10 nsP-ChannelSWITCHING80m Ω @ 3.5A, 4.5V1.5V @ 250μA779pF @ 10V3.5A Ta10nC @ 4.5V9ns20V2.5V 4.5V±8V9 ns27 ns-3.5A-800mV8V-20V-20V-800 mV1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free---------
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---Surface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)PowerTrench®2008--Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)----1.6W Ta----P-Channel-35mOhm @ 5.5A, 4.5V1.5V @ 250μA1456pF @ 10V5.5A Ta20nC @ 4.5V-20V2.5V 4.5V±12V---------------SuperSOT™-6-------
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ACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6630mgSILICON-55°C~150°C TJTape & Reel (TR)-1997e3yesActive1 (Unlimited)6SMD/SMTEAR9935MOhm-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING5A11.6W TaSingleENHANCEMENT MODE1.6W7.5 nsN-ChannelSWITCHING35m Ω @ 5A, 10V2V @ 250μA350pF @ 15V5A Ta17nC @ 10V12ns-4.5V 10V±20V12 ns13 ns5A1.7V20V30V30V1.7 V1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-Tin15A150°C---
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6-EAR9965mOhm-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-4A11.6W TaSingleENHANCEMENT MODE1.6W6 nsP-ChannelSWITCHING65m Ω @ 4A, 4.5V1.5V @ 250μA925pF @ 10V4A Ta16nC @ 4.5V7ns20V2.5V 4.5V±8V7 ns120 ns4A-600mV8V-20V--1mm3mm1.7mmNo SVHC-ROHS3 CompliantLead Free-Tin-4A-NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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