Fairchild/ON Semiconductor FDC642P

Name: FDC642P
Brand: Fairchild/ON Semiconductor
SKU: 2848974-FDC642P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC642P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848974-FDC642P

Description:: MOSFET P-CH 20V 4A SSOT-6

ECAD Model:

Datasheet:: FDC642P

Specifications

Fairchild/ON Semiconductor FDC642P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC642P.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
65mOhm
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-4A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
6 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
925pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Rise Time
7ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
120 ns
Continuous Drain Current (ID)
4A
Threshold Voltage
-600mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
-20V
Height
1mm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDC642P Features
The innovative PowerTrench? process from ON Semiconductor is used to create this P-Channel 2.5V specified MOSFET. This process has been carefully designed to reduce on-state resistance while maintaining low gate charge for excellent switching performance. For applications where larger packages are unfeasible, these devices have been engineered to give outstanding power dissipation in a very compact footprint.

FDC642P Features
Max rDS(on) = 65 m? at VGS = -4.5 V, ID = -4.0 A
Max rDS(on) = 100 m? at VGS = -2.5 V, ID = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
High-performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Termination is Lead-free and RoHS Compliant

FDC642P Applications
Load switch
Battery protection
Power management

FDC642P More Descriptions

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ
Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R / MOSFET P-CH 20V 4A 6SSOT
MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance
Chip Resistor - Surface Mount 820Ohm 1% 200 ppm/°C Thick Film Tape & Reel 1 (Unlimited) Thick Film Resistors - SMD 0402 1% 820ohm Anti-Sulfur AEC-Q200
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Certification