Fairchild/ON Semiconductor FDC608PZ
- Part Number:
- FDC608PZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586056-FDC608PZ
- Description:
- MOSFET P-CH 20V 5.8A SSOT-6
- ECAD Model:
-
- Datasheet:
- FDC608PZ
Fairchild/ON Semiconductor FDC608PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC608PZ.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time13 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance30MOhm
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-5.8A
- Number of Elements1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs30m Ω @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1330pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.8A Ta
- Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
- Rise Time8ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time91 ns
- Continuous Drain Current (ID)5.8A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)20A
- Dual Supply Voltage-20V
- Nominal Vgs-1 V
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC608PZ Description
The FDC608PZ P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
FDC608PZ Features
Low Gate Charge
High performance trench technology for extremely low RDS(ON)
Turn-Off Delay Time: 91 ns
ROHS3 Compliant
No SVHC
Lead Free
SuperSOTTM–6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick)
FDC608PZ Applications
Load switching and power management
Battery power circuits
DC/DC conversions
Electronics devices
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
The FDC608PZ P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
FDC608PZ Features
Low Gate Charge
High performance trench technology for extremely low RDS(ON)
Turn-Off Delay Time: 91 ns
ROHS3 Compliant
No SVHC
Lead Free
SuperSOTTM–6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick)
FDC608PZ Applications
Load switching and power management
Battery power circuits
DC/DC conversions
Electronics devices
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
FDC608PZ More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ
MOSFET P-CH 20V 5.8A SSOT-6 / Trans MOSFET P-CH 20V 5.8A 6-Pin TSOT-23 T/R
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
MOSFET P-CH 20V 5.8A SSOT-6 / Trans MOSFET P-CH 20V 5.8A 6-Pin TSOT-23 T/R
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
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