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FDC653N

Fairchild/ON Semiconductor FDC653N

Part Number:
FDC653N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848976-FDC653N
Description:
MOSFET N-CH 30V 5A SSOT-6
ECAD Model:
Datasheet:
FDC653N

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Specifications
Fairchild/ON Semiconductor FDC653N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC653N.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    35MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.6W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    7.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.7 V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC653N Description


FDC653N N-Channel Enhancement Mode Power Field-Effect Transistors are made using a unique, high cell density technology called DMOS. This process is extremely dense and is designed to reduce the on-state resistance. These devices are specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits in which fast switching, as well as low power loss in the line.


FDC653N Features


RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability



FDC653N Applications


Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
FDC653N More Descriptions
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R - Product that comes on tape, but is not reeled
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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