Fairchild/ON Semiconductor BS170_J35Z

Name: BS170_J35Z
Brand: Fairchild/ON Semiconductor
SKU: 3586723-BS170_J35Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS170_J35Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586723-BS170_J35Z

Description:: MOSFET N-CH 60V 500MA TO-92

ECAD Model:

Datasheet:: BS170_J35Z

Specifications

Fairchild/ON Semiconductor BS170_J35Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BS170_J35Z.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Base Part Number
BS170
Power Dissipation-Max
830mW Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
40pF @ 10V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V

Description

BS170_J35Z Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 40pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.

BS170_J35Z Features
a 60V drain to source voltage (Vdss)

BS170_J35Z Applications
There are a lot of ON Semiconductor
BS170_J35Z applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BS170_J35Z More Descriptions

MOSFET N-CH 60V 500MA TO-92

Product Comparison

The three parts on the right have similar specifications to BS170_J35Z.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Base Part Number

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Mount

Weight

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Transistor Application

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Terminal Position

Turn On Delay Time

Turn-Off Delay Time

Height

Length

Width

REACH SVHC

View Compare
BS170_J35Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

-55°C~150°C TJ

Bulk

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

BS170

830mW Ta

N-Channel

5Ohm @ 200mA, 10V

3V @ 1mA

40pF @ 10V

500mA Ta

60V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BS170PSTOA

Diodes Incorporated

Through Hole

E-Line-3

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

625mW Ta

N-Channel

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

270mA Ta

-

10V

±20V

Through Hole

453.59237mg

SILICON

2012

e3

3

EAR99

MATTE TIN

60V

WIRE

260

unknown

270mA

40

3

R-PSIP-W3

Not Qualified

1

1

Single

ENHANCEMENT MODE

625mW

SWITCHING

270mA

20V

0.27A

5Ohm

60V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BS170_J35Z vs BS170PSTOA
BS170_D27Z

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 200mA, 10V

830mW (Ta)

Tape & Reel (TR)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

40pF @ 10V

-

N-Channel

-

10V

60V

500mA (Ta)

-

-

-

-

-

-

-

BS170_J35Z vs BS170_D27Z
BS170FTC

Diodes Incorporated

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

330mW Ta

N-Channel

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

150μA Ta

-

10V

±20V

Surface Mount

7.994566mg

SILICON

-

e3

3

EAR99

MATTE TIN

60V

GULL WING

260

unknown

150mA

40

-

R-PDSO-G3

Not Qualified

1

1

Single

ENHANCEMENT MODE

330mW

-

150mA

20V

-

5Ohm

60V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DUAL

10 ns

10 ns

1mm

2.9mm

1.3mm

No SVHC

BS170_J35Z vs BS170FTC