ON Semiconductor BS170RLRP

Name: BS170RLRP
Brand: ON Semiconductor
SKU: 2852145-BS170RLRP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS170RLRP

Manufacturer:: ON Semiconductor

Ventron No:: 2852145-BS170RLRP

Description:: MOSFET N-CH 60V 500MA TO-92

ECAD Model:

Datasheet:: BS170RLRP

Specifications

ON Semiconductor BS170RLRP technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BS170RLRP.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 10V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
500mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.5A
Drain-source On Resistance-Max
5Ohm
Drain to Source Breakdown Voltage
60V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BS170RLRP Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 500mA.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

BS170RLRP Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage

BS170RLRP Applications
There are a lot of ON Semiconductor
BS170RLRP applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BS170RLRP More Descriptions

MOSFETs- Power and Small Signal 60V 500mA N-Channel No-Cancel/No-Return
Trans GP BJT NPN 80V 1A 4-Pin(3 Tab) SOT-223 T/R
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

Product Comparison

The three parts on the right have similar specifications to BS170RLRP.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Lifecycle Status

Surface Mount

Number of Pins

Pbfree Code

Additional Feature

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Weight

Terminal Form

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Height

Length

Width

REACH SVHC

View Compare
BS170RLRP

ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2005

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

8541.21.00.95

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

240

not_compliant

500mA

30

3

O-PBCY-T3

Not Qualified

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

500mA

20V

0.5A

5Ohm

60V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BS170ZL1G

ON Semiconductor

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e1

Obsolete

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

260

-

500mA

40

3

-

Not Qualified

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

500mA

20V

0.5A

5Ohm

60V

RoHS Compliant

Lead Free

OBSOLETE (Last Updated: 3 days ago)

NO

3

yes

EUROPEAN PART NUMBER

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BS170RLRP vs BS170ZL1G
BS170_D27Z

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 200mA, 10V

830mW (Ta)

Tape & Reel (TR)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

40pF @ 10V

-

N-Channel

-

10V

60V

500mA (Ta)

-

-

-

-

-

-

-

-

-

BS170RLRP vs BS170_D27Z
BS170FTC

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

-

60V

MOSFET (Metal Oxide)

DUAL

260

unknown

150mA

40

-

R-PDSO-G3

Not Qualified

1

330mW Ta

Single

ENHANCEMENT MODE

330mW

N-Channel

-

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

150μA Ta

10V

±20V

150mA

20V

-

5Ohm

60V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

7.994566mg

GULL WING

1

10 ns

10 ns

1mm

2.9mm

1.3mm

No SVHC

BS170RLRP vs BS170FTC