ON Semiconductor BS170G

Name: BS170G
Brand: ON Semiconductor
SKU: 3586609-BS170G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS170G

Manufacturer:: ON Semiconductor

Ventron No:: 3586609-BS170G

Description:: MOSFET N-CH 60V 500MA TO-92

ECAD Model:

Datasheet:: BS170G

Specifications

ON Semiconductor BS170G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BS170G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
5Ohm
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 10V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
4 ns
Continuous Drain Current (ID)
500mA
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
60V
Nominal Vgs
2 V
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BS170G Description
BS170G power MOSFETs, created by ON Semiconductor, are able to switch between data lines quickly and amplify the signals more quickly than conventional transistors. 350 mW is the most power it can dissipate. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C. The enhancement mode is used by this N channel MOSFET transistor.

BS170G Features
Rugged and Reliable
These are Pb?Free Devices
High Saturation Current Capability
Voltage Controlled Small Signal Switch
High Density Cell Design for Low RDS(ON)

BS170G Applications
Industrial
Automotive
Personal electronics

BS170G More Descriptions

BS170: Small Signal MOSFET 60V 500mA 5 Ohm Single N-Channel TO-92
ON SEMICONDUCTOR BS170G MOSFET Transistor, N Channel, 500 mA, 60 V, 5 ohm, 10 V, 2 V
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Tube
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
MOSFET, N, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 350mW; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 500mA; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to BS170G.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Form

Reach Compliance Code

JESD-30 Code

Qualification Status

Number of Channels

Drain-source On Resistance-Max

Additional Feature

HTS Code

View Compare
BS170G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 day ago)

Copper, Silver, Tin

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2005

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

5Ohm

Tin/Silver/Copper (Sn/Ag/Cu)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

260

500mA

40

3

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

4 ns

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

4 ns

500mA

2V

20V

0.5A

60V

2 V

5.33mm

5.2mm

4.19mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
BS170PSTOA

Diodes Incorporated

-

-

Through Hole

E-Line-3

-

-

453.59237mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

MATTE TIN

-

60V

MOSFET (Metal Oxide)

-

260

270mA

40

3

1

625mW Ta

Single

ENHANCEMENT MODE

625mW

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

270mA Ta

10V

±20V

-

270mA

-

20V

0.27A

60V

-

-

-

-

-

-

RoHS Compliant

Lead Free

Through Hole

WIRE

unknown

R-PSIP-W3

Not Qualified

1

5Ohm

-

-

BS170G vs BS170PSTOA
BS170ZL1G

ON Semiconductor

OBSOLETE (Last Updated: 3 days ago)

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Tin/Silver/Copper (Sn/Ag/Cu)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

260

500mA

40

3

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

-

500mA

-

20V

0.5A

60V

-

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

-

-

Not Qualified

-

5Ohm

EUROPEAN PART NUMBER

-

BS170G vs BS170ZL1G
BS170RLRP

ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2005

e0

-

Obsolete

1 (Unlimited)

3

EAR99

-

Tin/Lead (Sn/Pb)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

240

500mA

30

3

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

-

500mA

-

20V

0.5A

60V

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Through Hole

-

not_compliant

O-PBCY-T3

Not Qualified

-

5Ohm

-

8541.21.00.95

BS170G vs BS170RLRP