Fairchild/ON Semiconductor BS170_D27Z

Name: BS170_D27Z
Brand: Fairchild/ON Semiconductor
SKU: 3070120-BS170_D27Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS170_D27Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070120-BS170_D27Z

Description:: MOSFET N-CH 60V 500MA TO-92

ECAD Model:

Datasheet:: BS170_D27Z

Specifications

Fairchild/ON Semiconductor BS170_D27Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BS170_D27Z.

Vgs(th) (Max) @ Id:
3V @ 1mA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-92-3
Series:
-
Rds On (Max) @ Id, Vgs:
5 Ohm @ 200mA, 10V
Power Dissipation (Max):
830mW (Ta)
Packaging:
Tape & Reel (TR)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
-
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)

Description

part No. BS170_D27Z Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

BS170_D27Z More Descriptions

FAIRCHILD SEMICONDUCTORBS170_D27ZN CHANNEL MOSFET, 60V, 500mA, TO-92
N-Channel 60 V 5 Ohm Through Hole Enhancement Mosfet - TO-92
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:500mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V; Power Dissipation, Pd:830mW ;RoHS Compliant: Yes
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

Product Comparison

The three parts on the right have similar specifications to BS170_D27Z.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Mount

HTS Code

Reach Compliance Code

JESD-30 Code

Weight

Terminal Form

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Height

Length

Width

REACH SVHC

View Compare
BS170_D27Z

Fairchild/ON Semiconductor

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 200mA, 10V

830mW (Ta)

Tape & Reel (TR)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

40pF @ 10V

-

N-Channel

-

10V

60V

500mA (Ta)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BS170ZL1G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

OBSOLETE (Last Updated: 3 days ago)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

EUROPEAN PART NUMBER

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

260

500mA

40

3

Not Qualified

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

500mA

20V

0.5A

5Ohm

60V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

BS170_D27Z vs BS170ZL1G
BS170RLRP

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2005

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

240

500mA

30

3

Not Qualified

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

500mA

20V

0.5A

5Ohm

60V

Non-RoHS Compliant

Contains Lead

Through Hole

8541.21.00.95

not_compliant

O-PBCY-T3

-

-

-

-

-

-

-

-

-

BS170_D27Z vs BS170RLRP
BS170FTC

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

-

60V

MOSFET (Metal Oxide)

DUAL

260

150mA

40

-

Not Qualified

1

330mW Ta

Single

ENHANCEMENT MODE

330mW

N-Channel

-

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

150μA Ta

10V

±20V

150mA

20V

-

5Ohm

60V

RoHS Compliant

Lead Free

Surface Mount

-

unknown

R-PDSO-G3

7.994566mg

GULL WING

1

10 ns

10 ns

1mm

2.9mm

1.3mm

No SVHC

BS170_D27Z vs BS170FTC