Fairchild/ON Semiconductor BS170_D75Z

Name: BS170_D75Z
Brand: Fairchild/ON Semiconductor
SKU: 2848699-BS170_D75Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS170_D75Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848699-BS170_D75Z

Description:: MOSFET N-CH 60V 500MA TO-92

ECAD Model:

Datasheet:: BS170_D75Z

Specifications

Fairchild/ON Semiconductor BS170_D75Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BS170_D75Z.

Vgs(th) (Max) @ Id:
3V @ 1mA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-92-3
Series:
-
Rds On (Max) @ Id, Vgs:
5 Ohm @ 200mA, 10V
Power Dissipation (Max):
830mW (Ta)
Packaging:
Tape & Box (TB)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
-
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)

Description

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BS170_D75Z More Descriptions

Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Comparison

The three parts on the right have similar specifications to BS170_D75Z.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Lifecycle Status

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

HTS Code

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

View Compare
BS170_D75Z

Fairchild/ON Semiconductor

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 200mA, 10V

830mW (Ta)

Tape & Box (TB)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

40pF @ 10V

-

N-Channel

-

10V

60V

500mA (Ta)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BS170G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LAST SHIPMENTS (Last Updated: 1 day ago)

Copper, Silver, Tin

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2005

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

5Ohm

Tin/Silver/Copper (Sn/Ag/Cu)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

260

500mA

40

3

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

4 ns

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

4 ns

500mA

2V

20V

0.5A

60V

2 V

5.33mm

5.2mm

4.19mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

BS170_D75Z vs BS170G
BS170_D27Z

Fairchild/ON Semiconductor

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 200mA, 10V

830mW (Ta)

Tape & Reel (TR)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

40pF @ 10V

-

N-Channel

-

10V

60V

500mA (Ta)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BS170_D75Z vs BS170_D27Z
BS170RLRA

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

OBSOLETE (Last Updated: 3 days ago)

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

-

Tin/Lead (Sn80Pb20)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

BOTTOM

240

500mA

30

3

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

-

500mA

-

20V

0.5A

60V

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Through Hole

8541.21.00.95

not_compliant

Not Qualified

5Ohm

BS170_D75Z vs BS170RLRA