ON Semiconductor 2N7002WT1G

Name: 2N7002WT1G
Brand: ON Semiconductor
SKU: 2477899-2N7002WT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002WT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2477899-2N7002WT1G

Description:: MOSFET N-CH 60V 310MA SOT323

ECAD Model:

Datasheet:: 2N7002WT1G

Specifications

ON Semiconductor 2N7002WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N7002WT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
9 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1.6Ohm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
280mW Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
280mW
Turn On Delay Time
12.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C
310mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
55.8 ns
Continuous Drain Current (ID)
340mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Nominal Vgs
1 V
Height
900μm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7002WT1G Description
The onsemi 2N7002WT1G Transistor is a low-power N-channel tiny signal Power MOSFET. It has a drain source voltage of 60V and a continuous drain current of 310mA. It can be used in low side load switches, level shift circuits, DC-to-DC converters, DSC, and PDA applications.

2N7002WT1G Features
ESD Protected
-55 to 150°C Operating junction temperature range
Low RDS (ON)
Small footprint surface-mount package
Halogen-free

2N7002WT1G Applications
Consumer Electronics
Power Management
Industrial
Portable Device

2N7002WT1G More Descriptions

2N7002WT1G N-channel MOSFET Transistor; 0.34 A; 60 V; 3-Pin SC-70
Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70
Trans MOSFET N-CH 60V 0.31A 3-Pin SC-70 T/R / MOSFET N-CH 60V 310MA SOT323
N-Channel 60 V 1.6 Ohm 280 mW Surface Mount Small Signal MOSFET - SOT-323
N CHANNEL MOSFET, 60V, 340mA, SC-70, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 340mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 340 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 29 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 55.8 / Turn-ON Delay Time ns = 12.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 280

Product Comparison

The three parts on the right have similar specifications to 2N7002WT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Mount

Weight

Termination

Number of Channels

Voltage

Current

Dual Supply Voltage

Manufacturer Package Identifier

Published

Additional Feature

View Compare
2N7002WT1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

Tin

Surface Mount

SC-70, SOT-323

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

1.6Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

280mW Tj

Single

ENHANCEMENT MODE

280mW

12.2 ns

N-Channel

SWITCHING

1.6 Ω @ 500mA, 10V

2.5V @ 250μA

Halogen Free

24.5pF @ 20V

310mA Ta

0.7nC @ 4.5V

9ns

4.5V 10V

±20V

9 ns

55.8 ns

340mA

1V

20V

60V

1 V

900μm

2.2mm

1.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7000RLRMG

ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

e1

yes

Obsolete

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

BOTTOM

-

260

40

3

1

350mW Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

5 Ω @ 500mA, 10V

3V @ 1mA

-

60pF @ 25V

200mA Ta

-

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TIN SILVER COPPER

unknown

O-PBCY-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

0.2A

5Ohm

60V

5 pF

-

-

-

-

-

-

-

-

-

-

2N7002WT1G vs 2N7000RLRMG
2N7002-E3

Vishay Siliconix

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

-

Obsolete

1 (Unlimited)

3

EAR99

7.5Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

3

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

7 ns

N-Channel

-

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

-

50pF @ 25V

115mA Ta

-

-

5V 10V

±20V

-

11 ns

115mA

2.1V

20V

60V

2 V

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

-

-

-

-

-

5 pF

Surface Mount

1.437803g

SMD/SMT

1

60V

3A

60V

-

-

-

2N7002WT1G vs 2N7002-E3
2N7002E-7-F

Diodes Incorporated

-

19 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

4Ohm

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

370mW Ta

Single

ENHANCEMENT MODE

540mW

7 ns

N-Channel

SWITCHING

3 Ω @ 250mA, 10V

2.5V @ 250μA

-

50pF @ 25V

250mA Ta

0.22nC @ 4.5V

-

4.5V 10V

±20V

-

11 ns

250mA

-

20V

60V

-

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

-

-

0.24A

-

-

5 pF

Surface Mount

7.994566mg

-

1

-

-

-

2N7002E-7-F

2013

LOW THRESHOLD

2N7002WT1G vs 2N7002E-7-F