Diodes Incorporated 2N7002T-7-F
- Part Number:
- 2N7002T-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848470-2N7002T-7-F
- Description:
- MOSFET N-CH 60V 115MA SOT-523
- Datasheet:
- 2N7002T-7-F
Diodes Incorporated 2N7002T-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002T-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance7.5Ohm
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating115mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)115mA
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Nominal Vgs2 V
- Feedback Cap-Max (Crss)5 pF
- Min Breakdown Voltage60V
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002T-7-F Overview
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 115mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002T-7-F Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
2N7002T-7-F Applications
There are a lot of Diodes Incorporated
2N7002T-7-F applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 115mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002T-7-F Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
2N7002T-7-F Applications
There are a lot of Diodes Incorporated
2N7002T-7-F applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
2N7002T-7-F More Descriptions
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R - Tape and Reel
N-Channel 60 V 7.5 Ohm Enhancement Mode Transistor SOT-523
MOSFET, N CH, 60V, 0.115A, SOT-523; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
MOSFET, N CH, 60V, 0.115A, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
N-Channel 60 V 7.5 Ohm Enhancement Mode Transistor SOT-523
MOSFET, N CH, 60V, 0.115A, SOT-523; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
MOSFET, N CH, 60V, 0.115A, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to 2N7002T-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsFeedback Cap-Max (Crss)Min Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)Manufacturer Package IdentifierGate Charge (Qg) (Max) @ VgsView Compare
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2N7002T-7-F15 WeeksTinSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR997.5OhmHIGH RELIABILITYFET General Purpose Power60VMOSFET (Metal Oxide)DUALGULL WING260115mA40311150mW TaSingleENHANCEMENT MODE150mW7 nsN-ChannelSWITCHING7.5 Ω @ 50mA, 5V2V @ 250μA50pF @ 25V115mA Ta5V 10V±20V11 ns115mA2V20V60V2 V5 pF60V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free---------------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3-----MOSFET (Metal Oxide)BOTTOM-260-4031-350mW Tc-ENHANCEMENT MODE--N-Channel-5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta4.5V 10V±20V------5 pF------ROHS3 Compliant-NOTIN SILVER COPPERunknownO-PBCY-T3COMMERCIALSINGLE WITH BUILT-IN DIODE60V0.2A5Ohm60V----
-
----SOT-323(SC-70)----Tape & Reel (TR)-------------------------N Channel-5Ω @ 500mA,10V2.5V @ 250uA-----------------RoHS Compliant-------60V---115mA200mW--
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19 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR994OhmLOW THRESHOLDFET General Purpose Powers-MOSFET (Metal Oxide)DUALGULL WING260-40311370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta4.5V 10V±20V11 ns250mA-20V60V-5 pF-1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-Matte Tin (Sn)-----0.24A----2N7002E-7-F0.22nC @ 4.5V
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