Diodes Incorporated 2N7002H-7

Name: 2N7002H-7
Brand: Diodes Incorporated
SKU: 3585969-2N7002H-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002H-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3585969-2N7002H-7

Description:: MOSFET N-CH 60V 0.17A SOT23-3

ECAD Model:

Datasheet:: 2N7002H-7

Specifications

Diodes Incorporated 2N7002H-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002H-7.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Manufacturer Package Identifier
2N7002H-7
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
HIGH RELIABILITY
HTS Code
8541.21.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
370mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
26pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.35nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Continuous Drain Current (ID)
170mA
Drain Current-Max (Abs) (ID)
0.17A
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

2N7002H-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 26pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 170mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.17A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.

2N7002H-7 Features
a continuous drain current (ID) of 170mA
a 60V drain to source voltage (Vdss)

2N7002H-7 Applications
There are a lot of Diodes Incorporated
2N7002H-7 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

2N7002H-7 More Descriptions

Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
Mosfet, N-Ch, 60V, 0.17A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002H-7
N-Channel 60 V 170 mA 370 mW Enhancement Mode Surface Mount Mosfet - SOT-23

Product Comparison

The three parts on the right have similar specifications to 2N7002H-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Contact Plating

Surface Mount

Number of Pins

Subcategory

Pin Count

Qualification Status

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Supplier Device Package

Base Part Number

View Compare
2N7002H-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

2N7002H-7

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

HIGH RELIABILITY

8541.21.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

370mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

7.5 Ω @ 50mA, 5V

3V @ 250μA

26pF @ 25V

170mA Ta

0.35nC @ 4.5V

60V

5V

±20V

170mA

0.17A

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

-

-

1

-

300mW Tj

ENHANCEMENT MODE

N-Channel

SWITCHING

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

0.81nC @ 5V

-

4.5V 10V

±20V

310mA

0.26A

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

Tin

YES

3

FET General Purpose Power

3

Not Qualified

Single

300mW

1.7 ns

1.2ns

1.2 ns

4.8 ns

20V

60V

Lead Free

-

-

-

-

2N7002H-7 vs 2N7002ET3G
2N7002W

Fairchild/ON Semiconductor

-

-

-

SOT-323(SC-70)

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

5Ω @ 500mA,10V

2.5V @ 250uA

-

-

-

60V

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

115mA

200mW

-

-

2N7002H-7 vs 2N7002W
2N7002_NB9G002

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

200mW Ta

-

N-Channel

-

7.5Ohm @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

-

60V

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT-23 (TO-236AB)

2N7002

2N7002H-7 vs 2N7002_NB9G002

Certification

Related parts for 2N7002H-7

2N7002_S00Z

Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-23
2N7002W-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT323
2N7002ET3G

ON Semiconductor

MOSFET N-CH 60V 260MA SOT-23
2N7000RLRMG

ON Semiconductor

MOSFET N-CH 60V 200MA TO-92
2N7002W

Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-323
2N7002-E3

Vishay Siliconix

MOSFET N-CH 60V 115MA SOT23
2N7002_NB9G002

Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-23
2N7002BKM,315

Nexperia USA Inc.

MOSFET N-CH 60V 450MA SOT883
2N7002E-7-F

Diodes Incorporated

MOSFET N-CH 60V 0.25A SOT23-3

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2N7002H~~(4)~~
2N7002~~(183)~~
2N700~~(173)~~
2N70~~(171)~~
2N7~~(192)~~

Part Number	Manufacturers	Description	Stock	Price
2N7002H-7 DISTI #V72:2272_06685888	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 0.17A Automotive 3-Pin SOT-2 RoHS: Compliant	100	1 $0.209 10 $0.1954 25 $0.1757 100 $0.0689
2N7002H-7 DISTI #V36:1790_06685888	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 0.17A Automotive 3-Pin SOT-2 RoHS: Compliant	0	3000 $0.0234 30000 $0.0233 300000 $0.0226 1500000 $0.0221
2N7002H-7 DISTI #2N7002H-7DICT-ND	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23-3 RoHS: Compliant	9878	1 $0.26 10 $0.21 100 $0.1115 500 $0.07338 1000 $0.0499
2N7002H-7 DISTI #2N7002H-7DIDKR-ND	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23-3 RoHS: Compliant	9878	1 $0.26 10 $0.21 100 $0.1115 500 $0.07338 1000 $0.0499
2N7002H-7 DISTI #2N7002H-7DITR-ND	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23-3 RoHS: Compliant	9000	3000 $0.0437 6000 $0.038 15000 $0.0323 30000 $0.0304 75000 $0.0285 150000 $0.02527
2N7002H-7 DISTI #2N7002H-7	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23-3 (Alt: 2N7002H-7) RoHS: Compliant	15000	3000 $0.03912 6000 $0.02836 12000 $0.02644 18000 $0.02313 30000 $0.02163
2N7002H-7 DISTI #2N7002H-7	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23-3 - Tape and Reel (Alt RoHS: Compliant	0	3000 $0.02338 6000 $0.02224 12000 $0.0212 18000 $0.02024 30000 $0.0198
2N7002H-7 DISTI #621-2N7002H-7	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA RoHS: Compliant	30222	1 $0.2 10 $0.187 100 $0.066 1000 $0.044 3000 $0.034 9000 $0.029 24000 $0.027 45000 $0.024
2N7002H-13 DISTI #621-2N7002H-13	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA RoHS: Compliant	7619	1 $0.2 10 $0.187 100 $0.066 1000 $0.044 2500 $0.034 10000 $0.029 20000 $0.027 50000 $0.024
2N7002H-7 DISTI #2N7002H-7	Diodes Incorporated	Transistor: N-MOSFET, unipolar, 60V, 0.21A, 0.	4620	10 $0.05411 25 $0.03788 100 $0.03404 500 $0.0301 3000 $0.02705

Diodes Incorporated 2N7002H-7

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