Fairchild/ON Semiconductor 2N7002

Name: 2N7002
Brand: Fairchild/ON Semiconductor
SKU: 2478067-2N7002
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478067-2N7002

Description:: MOSFET N-CH 60V 115MA SOT-23

ECAD Model:

Datasheet:: 2N700(0,2) Datasheet

Part Pictures

Specifications

Fairchild/ON Semiconductor 2N7002 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7002.

Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
STripFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
115mA
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
2N70
Pin Count
3
Number of Elements
1
Power Dissipation-Max
350mW Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
43pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200mA Tc
Gate Charge (Qg) (Max) @ Vgs
2nC @ 5V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±18V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
7 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
18V
Drain Current-Max (Abs) (ID)
0.2A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Nominal Vgs
2.1 V
Height
1.2mm
Length
3.03mm
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7002 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 43pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.In this case, the threshold voltage of the transistor is 2.1V, which means that it will not activate any of its functions when its threshold voltage reaches 2.1V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

2N7002 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 7 ns
a threshold voltage of 2.1V

2N7002 Applications
There are a lot of STMicroelectronics
2N7002 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

2N7002 More Descriptions

Transistor MOSFET N-Ch. 0,28A/60V SOT23 2N7002
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 280 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5 / Gate-Source Voltage V = 30 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

Product Comparison

The three parts on the right have similar specifications to 2N7002.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Termination

Resistance

Number of Channels

Voltage

Current

Supplier Device Package

Published

View Compare
2N7002

Fairchild/ON Semiconductor

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

4.535924g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

STripFET™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

LOW THRESHOLD

FET General Purpose Power

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

115mA

30

2N70

3

1

350mW Tc

Single

ENHANCEMENT MODE

350mW

5 ns

N-Channel

SWITCHING

5 Ω @ 500mA, 10V

3V @ 250μA

43pF @ 25V

200mA Tc

2nC @ 5V

15ns

4.5V 10V

±18V

15 ns

7 ns

200mA

2.1V

18V

0.2A

60V

60V

2.1 V

1.2mm

3.03mm

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7000RLRMG

ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

-

e1

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

BOTTOM

-

260

-

40

-

3

1

350mW Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

5 Ω @ 500mA, 10V

3V @ 1mA

60pF @ 25V

200mA Ta

-

-

4.5V 10V

±20V

-

-

-

-

-

0.2A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

TIN SILVER COPPER

unknown

O-PBCY-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

5Ohm

60V

5 pF

-

-

-

-

-

-

-

2N7002 vs 2N7000RLRMG
2N7002-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

3

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

7 ns

N-Channel

-

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

-

-

5V 10V

±20V

-

11 ns

115mA

2.1V

20V

-

60V

60V

2 V

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Matte Tin (Sn)

-

-

-

-

-

-

-

5 pF

SMD/SMT

7.5Ohm

1

60V

3A

-

-

2N7002 vs 2N7002-E3
2N7002_NB9G002

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

2N7002

-

-

200mW Ta

-

-

-

-

N-Channel

-

7.5Ohm @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

-

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

-

-

-

-

-

SOT-23 (TO-236AB)

2015

2N7002 vs 2N7002_NB9G002