2N7002-TP

Micro Commercial Co 2N7002-TP

Part Number:
2N7002-TP
Manufacturer:
Micro Commercial Co
Ventron No:
2849660-2N7002-TP
Description:
MOSFET N-CH 60V 0.115A SOT-23
ECAD Model:
Datasheet:
2N7002-TP

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Specifications
Micro Commercial Co 2N7002-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co 2N7002-TP.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    CMOS COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation-Max
    200mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA Ta
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Drain Current-Max (Abs) (ID)
    0.115A
  • DS Breakdown Voltage-Min
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • RoHS Status
    ROHS3 Compliant
Description
2N7002-TP Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 0.115A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

2N7002-TP Features
a 60V drain to source voltage (Vdss)


2N7002-TP Applications
There are a lot of Micro Commercial Co
2N7002-TP applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
2N7002-TP More Descriptions
2N7002 Series N-Channel 60 V 7.5 Ohm Surface Mount MosFet - SOT-23-3
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FU; N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 1V
Product Comparison
The three parts on the right have similar specifications to 2N7002-TP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    RoHS Status
    Reach Compliance Code
    Vgs (Max)
    Drain-source On Resistance-Max
    Supplier Device Package
    Base Part Number
    Mount
    Number of Pins
    Weight
    Manufacturer Package Identifier
    Resistance
    Subcategory
    Number of Channels
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Gate Charge (Qg) (Max) @ Vgs
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    View Compare
  • 2N7002-TP
    2N7002-TP
    12 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    CMOS COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    10
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    200mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    60V
    5V 10V
    0.115A
    60V
    5 pF
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7000RLRMG
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    -
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    TIN SILVER COPPER
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    260
    40
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    350mW Tc
    ENHANCEMENT MODE
    N-Channel
    -
    5 Ω @ 500mA, 10V
    3V @ 1mA
    60pF @ 25V
    200mA Ta
    60V
    4.5V 10V
    0.2A
    60V
    5 pF
    ROHS3 Compliant
    unknown
    ±20V
    5Ohm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002_NB9G002
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200mW Ta
    -
    N-Channel
    -
    7.5Ohm @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    60V
    5V 10V
    -
    -
    -
    -
    -
    ±20V
    -
    SOT-23 (TO-236AB)
    2N7002
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002E-7-F
    19 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    LOW THRESHOLD
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    -
    1
    -
    370mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    3 Ω @ 250mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    250mA Ta
    -
    4.5V 10V
    0.24A
    -
    5 pF
    ROHS3 Compliant
    -
    ±20V
    -
    -
    -
    Surface Mount
    3
    7.994566mg
    2N7002E-7-F
    4Ohm
    FET General Purpose Powers
    1
    Single
    540mW
    7 ns
    0.22nC @ 4.5V
    11 ns
    250mA
    20V
    60V
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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