Micro Commercial Co 2N7002-TP
- Part Number:
- 2N7002-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2849660-2N7002-TP
- Description:
- MOSFET N-CH 60V 0.115A SOT-23
- Datasheet:
- 2N7002-TP
Micro Commercial Co 2N7002-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co 2N7002-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureCMOS COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max200mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Drain Current-Max (Abs) (ID)0.115A
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)5 pF
- RoHS StatusROHS3 Compliant
2N7002-TP Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 0.115A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
2N7002-TP Features
a 60V drain to source voltage (Vdss)
2N7002-TP Applications
There are a lot of Micro Commercial Co
2N7002-TP applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 0.115A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
2N7002-TP Features
a 60V drain to source voltage (Vdss)
2N7002-TP Applications
There are a lot of Micro Commercial Co
2N7002-TP applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
2N7002-TP More Descriptions
2N7002 Series N-Channel 60 V 7.5 Ohm Surface Mount MosFet - SOT-23-3
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FU; N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 1V
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 60V, 115mA, SOT-23, FU; N CHANNEL MOSFET, 60V, 115mA, SOT-23, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 1V
The three parts on the right have similar specifications to 2N7002-TP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinFeedback Cap-Max (Crss)RoHS StatusReach Compliance CodeVgs (Max)Drain-source On Resistance-MaxSupplier Device PackageBase Part NumberMountNumber of PinsWeightManufacturer Package IdentifierResistanceSubcategoryNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeGate Charge (Qg) (Max) @ VgsTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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2N7002-TP12 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)CMOS COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING260103R-PDSO-G3Not Qualified1SINGLE200mW TaENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta60V5V 10V0.115A60V5 pFROHS3 Compliant---------------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3-TIN SILVER COPPER-MOSFET (Metal Oxide)BOTTOM-260403O-PBCY-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE350mW TcENHANCEMENT MODEN-Channel-5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta60V4.5V 10V0.2A60V5 pFROHS3 Compliantunknown±20V5Ohm-----------------------
-
-Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2015--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------200mW Ta-N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta60V5V 10V-----±20V-SOT-23 (TO-236AB)2N7002---------------------
-
19 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)LOW THRESHOLDMOSFET (Metal Oxide)DUALGULL WING260403--1-370mW TaENHANCEMENT MODEN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta-4.5V 10V0.24A-5 pFROHS3 Compliant-±20V---Surface Mount37.994566mg2N7002E-7-F4OhmFET General Purpose Powers1Single540mW7 ns0.22nC @ 4.5V11 ns250mA20V60V1mm2.9mm1.3mmNo SVHCNoLead Free
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