2N7002-T1-GE3

Vishay Siliconix 2N7002-T1-GE3

Part Number:
2N7002-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2483395-2N7002-T1-GE3
Description:
MOSFET N-CH 60V 115MA SOT23
ECAD Model:
Datasheet:
2N7002-T1-GE3

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Specifications
Vishay Siliconix 2N7002-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    2N7002
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    200mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    115mA
  • Gate to Source Voltage (Vgs)
    40V
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
2N7002-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

2N7002-T1-GE3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage


2N7002-T1-GE3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
2N7002-T1-GE3 More Descriptions
Trans MOSFET N-CH 60V 0.115A 3-Pin(2 Tab) D2PAK T/R
Sot23 Nch Mosfet 60V 7.5R Rohs Compliant: No |Vishay 2N7002-T1-GE3
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Small Signal Field-Effect Transistors
Product Comparison
The three parts on the right have similar specifications to 2N7002-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Radiation Hardening
    RoHS Status
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    JESD-609 Code
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Pin Count
    Voltage
    Current
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Supplier Device Package
    View Compare
  • 2N7002-T1-GE3
    2N7002-T1-GE3
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Active
    1 (Unlimited)
    3
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    2N7002
    1
    1
    200mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    115mA
    40V
    60V
    5 pF
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002W
    -
    -
    SOT-323(SC-70)
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    -
    5Ω @ 500mA,10V
    2.5V @ 250uA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    60V
    115mA
    200mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002-E3
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    3
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    1
    200mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    -
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    115mA
    20V
    60V
    5 pF
    No
    ROHS3 Compliant
    -
    -
    -
    e3
    SMD/SMT
    EAR99
    7.5Ohm
    Matte Tin (Sn)
    3
    60V
    3A
    200mW
    7 ns
    11 ns
    2.1V
    60V
    2 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    Lead Free
    -
  • 2N7002_NB9G002
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2N7002
    -
    -
    200mW Ta
    -
    -
    N-Channel
    -
    7.5Ohm @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SOT-23 (TO-236AB)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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