Vishay Siliconix 2N7002-T1-GE3
- Part Number:
- 2N7002-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483395-2N7002-T1-GE3
- Description:
- MOSFET N-CH 60V 115MA SOT23
- Datasheet:
- 2N7002-T1-GE3
Vishay Siliconix 2N7002-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part Number2N7002
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)115mA
- Gate to Source Voltage (Vgs)40V
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)5 pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
2N7002-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7002-T1-GE3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
2N7002-T1-GE3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7002-T1-GE3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
2N7002-T1-GE3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
2N7002-T1-GE3 More Descriptions
Trans MOSFET N-CH 60V 0.115A 3-Pin(2 Tab) D2PAK T/R
Sot23 Nch Mosfet 60V 7.5R Rohs Compliant: No |Vishay 2N7002-T1-GE3
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Small Signal Field-Effect Transistors
Sot23 Nch Mosfet 60V 7.5R Rohs Compliant: No |Vishay 2N7002-T1-GE3
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Small Signal Field-Effect Transistors
The three parts on the right have similar specifications to 2N7002-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormBase Part NumberNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)Radiation HardeningRoHS StatusDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)JESD-609 CodeTerminationECCN CodeResistanceTerminal FinishPin CountVoltageCurrentPower DissipationTurn On Delay TimeTurn-Off Delay TimeThreshold VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCLead FreeSupplier Device PackageView Compare
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2N7002-T1-GE3Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)2009Active1 (Unlimited)3FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING2N700211200mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V115mA40V60V5 pFNoROHS3 Compliant------------------------
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--SOT-323(SC-70)----Tape & Reel (TR)--------------N Channel-5Ω @ 500mA,10V2.5V @ 250uA---------RoHS Compliant60V115mA200mW--------------------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING-11200mW TaSingleENHANCEMENT MODEN-Channel-7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V115mA20V60V5 pFNoROHS3 Compliant---e3SMD/SMTEAR997.5OhmMatte Tin (Sn)360V3A200mW7 ns11 ns2.1V60V2 V1.02mm3.04mm1.4mmNo SVHCLead Free-
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-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--2N7002--200mW Ta--N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V------60V---------------------SOT-23 (TO-236AB)
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