Vishay Siliconix 2N7002-T1-E3

Name: 2N7002-T1-E3
Brand: Vishay Siliconix
SKU: 2849004-2N7002-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2849004-2N7002-T1-E3

Description:: MOSFET N-CH 60V 115MA SOT23

ECAD Model:

Datasheet:: 2N7002-T1-E3

Specifications

Vishay Siliconix 2N7002-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002-T1-E3.

Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
7.5Ohm
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Voltage
60V
Power Dissipation-Max
200mW Ta
Element Configuration
Single
Current
15A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
115mA Ta
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
115mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.1 V
Feedback Cap-Max (Crss)
5 pF
Height
1.12mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7002-T1-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 115mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.1V threshold voltage. By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

2N7002-T1-E3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.1V

2N7002-T1-E3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-E3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

2N7002-T1-E3 More Descriptions

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 115MA SOT23
2N7002 Series N-Channel 60 V 7.5 Ohms Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 60V, 115Ma To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:200Mw Rohs Compliant: No |Vishay 2N7002-T1-E3.
MOSFET,N CH,60V,0.115A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:115mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Gfs Min:80mA/V; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:200mW; Power Dissipation Pd:200mW; Pulse Current Idm:800mA; SMD Marking:72; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to 2N7002-T1-E3.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Surface Mount

Qualification Status

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

Termination

Terminal Finish

Dual Supply Voltage

Factory Lead Time

Series

Case Connection

Max Dual Supply Voltage

View Compare
2N7002-T1-E3

Vishay Siliconix

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

7.5Ohm

LOW THRESHOLD

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

60V

200mW Ta

Single

15A

ENHANCEMENT MODE

200mW

7 ns

N-Channel

SWITCHING

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

5V 10V

±20V

11 ns

115mA

2.1V

20V

60V

150°C

2.1 V

5 pF

1.12mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

Tin

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

-

-

300mW Tj

Single

-

ENHANCEMENT MODE

300mW

1.7 ns

N-Channel

SWITCHING

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

4.5V 10V

±20V

4.8 ns

310mA

-

20V

60V

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

LAST SHIPMENTS (Last Updated: 1 week ago)

YES

Not Qualified

0.81nC @ 5V

1.2ns

1.2 ns

0.26A

-

-

-

-

-

-

-

2N7002-T1-E3 vs 2N7002ET3G
2N7002-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Obsolete

1 (Unlimited)

3

EAR99

7.5Ohm

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

3

1

1

60V

200mW Ta

Single

3A

ENHANCEMENT MODE

200mW

7 ns

N-Channel

-

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

5V 10V

±20V

11 ns

115mA

2.1V

20V

60V

-

2 V

5 pF

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

SMD/SMT

Matte Tin (Sn)

60V

-

-

-

-

2N7002-T1-E3 vs 2N7002-E3
2N7002BKM,315

Nexperia USA Inc.

Tin

-

Surface Mount

SC-101, SOT-883

3

-

SILICON

150°C TJ

Tape & Reel (TR)

2010

e3

-

Last Time Buy

1 (Unlimited)

3

-

-

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

BOTTOM

-

-

-

3

1

-

-

360mW Ta

Single

-

ENHANCEMENT MODE

715mW

5 ns

N-Channel

SWITCHING

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

450mA Ta

10V

±20V

12 ns

450mA

-

20V

60V

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

YES

-

0.6nC @ 4.5V

6ns

7 ns

0.45A

-

-

-

20 Weeks

Automotive, AEC-Q101, TrenchMOS™

DRAIN

60V

2N7002-T1-E3 vs 2N7002BKM,315