Fairchild/ON Semiconductor 2N7000_D26Z

Name: 2N7000_D26Z
Brand: Fairchild/ON Semiconductor
SKU: 2478973-2N7000_D26Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7000_D26Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478973-2N7000_D26Z

Description:: MOSFET N-CH 60V 200MA TO-92

ECAD Model:

Datasheet:: 2N7000_D26Z

Specifications

Fairchild/ON Semiconductor 2N7000_D26Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7000_D26Z.

Vgs(th) (Max) @ Id:
3V @ 1mA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-92-3
Series:
-
Rds On (Max) @ Id, Vgs:
5 Ohm @ 500mA, 10V
Power Dissipation (Max):
400mW (Ta)
Packaging:
Tape & Reel (TR)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
-
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)

Description

We can supply Fairchild/ON Semiconductor 2N7000_D26Z, use the request quote form to request 2N7000_D26Z pirce, Fairchild/ON Semiconductor Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N7000_D26Z.The price and lead time for 2N7000_D26Z depending on the quantity required, availability and warehouse location.

2N7000_D26Z More Descriptions

Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/RAvnet Japan
N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:400mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:200mA; Package / Case:TO-92; Power Dissipation Pd:400mW; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Comparison

The three parts on the right have similar specifications to 2N7000_D26Z.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Factory Lead Time

Contact Plating

Number of Pins

Series

Published

Additional Feature

Element Configuration

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

View Compare
2N7000_D26Z

Fairchild/ON Semiconductor

3V @ 1mA

±20V

MOSFET (Metal Oxide)

TO-92-3

-

5 Ohm @ 500mA, 10V

400mW (Ta)

Tape & Reel (TR)

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-55°C ~ 150°C (TJ)

Through Hole

50pF @ 25V

-

N-Channel

-

4.5V, 10V

60V

200mA (Ta)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7000RLRMG

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Box (TB)

e1

yes

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

MOSFET (Metal Oxide)

BOTTOM

260

unknown

40

3

O-PBCY-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

350mW Tc

ENHANCEMENT MODE

N-Channel

5 Ω @ 500mA, 10V

3V @ 1mA

60pF @ 25V

200mA Ta

60V

4.5V 10V

±20V

0.2A

5Ohm

60V

5 pF

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000_D26Z vs 2N7000RLRMG
2N7002W

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT-323(SC-70)

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

5Ω @ 500mA,10V

2.5V @ 250uA

-

-

60V

-

-

-

-

-

-

RoHS Compliant

115mA

200mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000_D26Z vs 2N7002W
2N7002BKM,315

Nexperia USA Inc.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

SC-101, SOT-883

YES

SILICON

150°C TJ

Tape & Reel (TR)

e3

-

Last Time Buy

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

BOTTOM

-

-

-

3

-

-

1

-

360mW Ta

ENHANCEMENT MODE

N-Channel

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

450mA Ta

-

10V

±20V

0.45A

-

-

-

ROHS3 Compliant

-

-

20 Weeks

Tin

3

Automotive, AEC-Q101, TrenchMOS™

2010

LOGIC LEVEL COMPATIBLE

Single

715mW

DRAIN

5 ns

SWITCHING

0.6nC @ 4.5V

6ns

7 ns

12 ns

450mA

20V

60V

60V

No

Lead Free

2N7000_D26Z vs 2N7002BKM,315