Diodes Incorporated ZVP3310FTC
- Part Number:
- ZVP3310FTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488800-ZVP3310FTC
- Description:
- MOSFET P-CH 100V 0.075A SOT23-3
- Datasheet:
- ZVP3310FTC
Diodes Incorporated ZVP3310FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP3310FTC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codeunknown
- Current Rating-75mA
- Number of Channels1
- Power Dissipation-Max330mW Ta
- Element ConfigurationSingle
- Power Dissipation330mW
- Turn On Delay Time8 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs20 Ω @ 150mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75mA Ta
- Rise Time8ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time8 ns
- Continuous Drain Current (ID)75mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVP3310FTC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 75mA, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
ZVP3310FTC Features
a continuous drain current (ID) of 75mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8 ns
a 100V drain to source voltage (Vdss)
ZVP3310FTC Applications
There are a lot of Diodes Incorporated
ZVP3310FTC applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 75mA, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
ZVP3310FTC Features
a continuous drain current (ID) of 75mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8 ns
a 100V drain to source voltage (Vdss)
ZVP3310FTC Applications
There are a lot of Diodes Incorporated
ZVP3310FTC applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZVP3310FTC More Descriptions
Compliant Surface Mount 7.994566 mg 8 ns Lead Free Tape & Reel (TR) 8 ns 20 Ω
MOSFET P-CH 100V 0.075A SOT23-3
Small Signal Field-Effect Transistor, 0.075A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 100V 0.075A SOT23-3
Small Signal Field-Effect Transistor, 0.075A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to ZVP3310FTC.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCTechnologyReach Compliance CodeCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsOperating ModeTransistor ApplicationFactory Lead TimeNumber of PinsPbfree CodeResistanceSubcategoryFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningView Compare
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ZVP3310FTCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)-100VMOSFET (Metal Oxide)unknown-75mA1330mW TaSingle330mW8 nsP-Channel20 Ω @ 150mA, 10V3.5V @ 1mA50pF @ 25V75mA Ta8ns100V10V±20V8 ns8 ns75mA20V-100VRoHS CompliantLead Free--------------------------
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Through HoleThrough HoleE-Line-3453.59237mg-55°C~150°C TJTape & Box (TB)2012Obsolete1 (Unlimited)-100VMOSFET (Metal Oxide)unknown-140mA1625mW TaSingle625mW8 nsP-Channel20 Ω @ 150mA, 10V3.5V @ 1mA50pF @ 25V140mA Ta8ns100V10V±20V8 ns8 ns140mA20V-100VRoHS CompliantLead FreeSILICONe33EAR99MATTE TINWIRE260403R-PSIP-W3Not Qualified1ENHANCEMENT MODESWITCHING-----------
-
Through HoleThrough HoleE-Line-3453.59237mg-55°C~150°C TJTape & Box (TB)2012Obsolete1 (Unlimited)-60VMOSFET (Metal Oxide)--160mA1625mW TaSingle625mW8 nsP-Channel14 Ω @ 200mA, 10V3.5V @ 1mA50pF @ 18V160mA Ta8ns60V10V±20V8 ns8 ns160mA20V-RoHS CompliantLead FreeSILICONe33EAR99Matte Tin (Sn)WIRE260403R-PSIP-W3Not Qualified1ENHANCEMENT MODESWITCHING-----------
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mg-55°C~150°C TJBulk2006Active1 (Unlimited)-100VMOSFET (Metal Oxide)--140mA1625mW TaSingle625mW8 nsP-Channel20 Ω @ 150mA, 10V3.5V @ 1mA50pF @ 25V140mA Ta8ns100V10V±20V8 ns8 ns140mA20V-100VROHS3 CompliantLead FreeSILICONe33EAR99Matte Tin (Sn)WIRE260403--1ENHANCEMENT MODE-17 Weeks3yes20OhmOther Transistors5 pF4.01mm4.77mm2.41mmNo SVHCNo
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