ZVP3310FTA

Diodes Incorporated ZVP3310FTA

Part Number:
ZVP3310FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478593-ZVP3310FTA
Description:
MOSFET P-CH 100V 0.075A SOT23-3
ECAD Model:
Datasheet:
ZVP3310FTA

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Specifications
Diodes Incorporated ZVP3310FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP3310FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    20Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -75mA
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    100V
  • Power Dissipation-Max
    330mW Ta
  • Element Configuration
    Single
  • Current
    75mA
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330mW
  • Turn On Delay Time
    8 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20 Ω @ 150mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75mA Ta
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    8 ns
  • Continuous Drain Current (ID)
    75mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP3310FTA Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75mA.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

ZVP3310FTA Features
a continuous drain current (ID) of 75mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8 ns


ZVP3310FTA Applications
There are a lot of Diodes Incorporated
ZVP3310FTA applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP3310FTA More Descriptions
Trans MOSFET P-CH 100V 0.075A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 100V, 0.075A, Sot-23 Rohs Compliant: Yes |Diodes Inc. ZVP3310FTA
P-Channel 100 V 20 Ohm Enhancement Mode Vertical DMOS FET-SOT-223
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: P-Channel / Enhancement mode Power dissipation: 0.33 W
Product Comparison
The three parts on the right have similar specifications to ZVP3310FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Pin Count
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Drain to Source Voltage (Vdss)
    Termination
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • ZVP3310FTA
    ZVP3310FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    20Ohm
    Matte Tin (Sn)
    -100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -75mA
    3
    1
    1
    100V
    330mW Ta
    Single
    75mA
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    SWITCHING
    20 Ω @ 150mA, 10V
    3.5V @ 1mA
    50pF @ 25V
    75mA Ta
    8ns
    10V
    ±20V
    8 ns
    8 ns
    75mA
    20V
    -100V
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP3310ASTZ
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -100V
    MOSFET (Metal Oxide)
    -
    WIRE
    -140mA
    3
    1
    1
    -
    625mW Ta
    Single
    -
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    SWITCHING
    20 Ω @ 150mA, 10V
    3.5V @ 1mA
    50pF @ 25V
    140mA Ta
    8ns
    10V
    ±20V
    8 ns
    8 ns
    140mA
    20V
    -100V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    260
    unknown
    40
    R-PSIP-W3
    Not Qualified
    100V
    -
    -
    -
    -
    -
  • ZVP3306ASTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -60V
    MOSFET (Metal Oxide)
    -
    WIRE
    -160mA
    3
    1
    1
    -
    625mW Ta
    Single
    -
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    SWITCHING
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    160mA Ta
    8ns
    10V
    ±20V
    8 ns
    8 ns
    160mA
    20V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    260
    unknown
    40
    R-PSIP-W3
    Not Qualified
    60V
    -
    -
    -
    -
    -
  • ZVP3306FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    14Ohm
    Matte Tin (Sn)
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -90mA
    -
    1
    1
    -
    330mW Ta
    Single
    -
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    -
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    90mA Ta
    8ns
    10V
    ±20V
    8 ns
    8 ns
    90mA
    20V
    -60V
    8 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    260
    -
    40
    -
    -
    60V
    SMD/SMT
    -3.5V
    0.09A
    -60V
    -3.5 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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